2N7002E-T1-E3

The 2N7002E-T1-E3 is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) widely used in electronic circuits for switching and amplification applications. It features a low on-resistance, enabling efficient operation in power management tasks. The device is designed to handle drain-source voltages up to 60V and continuous drain currents of around 400mA. Its compact package allows for easy integration into printed circuit boards (PCBs).
The 2N7002E-T1-E3 is suitable for low-voltage applications, making it ideal for driving LEDs, controlling motors, and interfacing with microcontrollers. Its gate threshold voltage typically ranges from 2V to 4V, ensuring it can be easily driven by standard logic levels.
This MOSFET is characterized by fast switching speeds and low power consumption, contributing to its popularity in consumer electronics, automotive, and industrial applications. Overall, the 2N7002E-T1-E3 is a versatile and reliable component for both hobbyists and professionals in the electronics field.

The 2N7002E-T1-E3 is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Capacity: The continuous drain current (I_D) is up to 0.3A.
3. Low On-Resistance: Offers low R_DS(on), typically around 0.5 ohms, ensuring efficient operation and reduced power loss.
4. Fast Switching Speed: Suitable for high-speed switching applications.
5. Gate Threshold Voltage (V_GS(th)): The gate-source threshold voltage ranges from 0.8V to 3V, making it suitable for logic-level applications.
6. Package Type: Available in a surface-mount SOT-23 package, making it ideal for space-constrained designs.
7. Applications: Commonly used in switching regulators, motor control, and other low-power electronic circuits.
This device is popular in consumer electronics, automotive, and other applications requiring efficient switching performance.

The 2N7002E-T1-E3 is packaged in a SOT-23 surface mount package.

The 2N7002E-T1-E3 is an N-channel MOSFET typically used for low-power switching applications. It has a total of three pins.
1. Gate (G) - Pin 1: This pin is used to control the MOSFET; applying a voltage here allows current to flow from the drain to the source.
2. Drain (D) - Pin 2: This pin is the output, where the load is connected. The current flows from the drain to the source when the MOSFET is turned on.
3. Source (S) - Pin 3: This pin is connected to the ground or the lower potential in the circuit.
The pinout allows for easy integration into various electronic circuits, mainly for switching tasks in low-voltage applications.

The 2N7002E-T1-E3 is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management, analog, sensors, logic, and discrete devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation and sustainability, providing high-performance and energy-efficient solutions to its customers.

The 2N7002E-T1-E3 is an N-channel MOSFET commonly used in low-power switching applications, such as in LED drivers, signal amplification, and analog switching. It is suitable for driving small loads in battery-powered devices, motor control, and as a switch in digital circuits. Its low gate threshold voltage makes it ideal for interfacing with microcontrollers and logic-level signals.

The 2N7002E-T1-E3 is an N-channel MOSFET. Equivalent products include the 2N7000, BS170, and 2N7002. These alternatives have similar characteristics in terms of voltage and current ratings, but ensure to verify specific parameters like threshold voltage and on-resistance for your application.