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2SC5226A-4-TL-E

Name: 2SC5226A-4-TL-E
Rating: 4.7 (12 reviews)

RF TRANS NPN 10V 7GHZ 3MCP

제조업체
Mfr.부분 #2SC5226A-4-TL-E
패키지 SC-70, SOT-323
데이터시트 2SC5226A-4-TL-E DataSheet
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사양

Supplier	onsemi
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
TransistorType	NPN
Voltage-CollectorEmitterBreakdown(Max)	10V
Frequency-Transition	7GHz
NoiseFigure(dBTyp@f)	1dB @ 1GHz
Gain	12dB
Power-Max	150mW
DCCurrentGain(hFE)(Min)@IcVce	90 @ 20mA, 5V
Current-Collector(Ic)(Max)	70mA
OperatingTemperature	150°C (TJ)
MountingType	Surface Mount
Package/Case	SC-70, SOT-323

개요

Description

The 2SC5226A-4-TL-E is a NPN bipolar junction transistor (BJT) designed primarily for low-frequency amplification and switching applications. It features a maximum collector current of 1.5 A and a maximum collector-emitter voltage (Vce) of 80 V, making it suitable for various electronic circuits.
This transistor is known for its high gain (hFE), which typically ranges from 40 to 320, and it operates efficiently in the frequency range of up to 100 MHz. The 2SC5226A-4-TL-E is housed in a TO-220 package, which provides effective thermal dissipation, important for power applications.
Applications include audio amplifiers, power supplies, and general-purpose switching. It is favored for its reliability and performance in consumer electronics. Proper thermal management and adherence to electrical specifications are crucial for optimal performance and longevity in circuits.

Features

The 2SC5226A-4-TL-E is a high-power NPN transistor designed for various applications, including switching and amplification. Key features include:
1. High Voltage Rating: Typically supports a collector-emitter voltage (Vce) of 160V, allowing for use in high-voltage applications.
2. High Current Capability: Offers a maximum collector current (Ic) of up to 5A, enabling efficient power handling.
3. High Power Dissipation: Rated for a total power dissipation of around 30W, suitable for robust applications.
4. Gain: Provides a current gain (hFE) ranging from 15 to 90, ensuring good amplification characteristics.
5. Package: Available in a TO-220 package, facilitating effective heat dissipation and ease of mounting.
6. Temperature Range: Operates effectively over a broad temperature range, enhancing reliability in various environments.
These features make the 2SC5226A-4-TL-E ideal for power amplifiers, motor drivers, and other high-power applications.

Package

The 2SC5226A-4-TL-E is typically offered in a TO-220 package type. This package is designed for high power applications, providing efficient heat dissipation and ease of mounting on heatsinks.

Pinout

The 2SC5226A-4-TL-E is a NPN bipolar junction transistor (BJT) primarily used for switching and amplification applications. It has a total of 3 pins, which are typically designated as follows:
1. Collector (C) - This is the terminal through which the main current flows out of the transistor.
2. Base (B) - This terminal controls the transistor's operation; applying a small current to the base allows a larger current to flow from collector to emitter.
3. Emitter (E) - This is the terminal through which the current enters the transistor.
This transistor is often used in low to medium power applications and is noted for its reliability and efficiency in electronic circuits. It features a maximum collector current of 1A and a maximum collector-emitter voltage of 50V, making it suitable for various electronic applications.

Manufacturer

The manufacturer of the 2SC5226A-4-TL-E is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management solutions, analog ICs, sensors, and discrete devices. The company serves various markets, such as automotive, industrial, communications, and consumer electronics. ON Semiconductor focuses on providing energy-efficient solutions and has a robust portfolio of products aimed at enhancing performance and reducing energy consumption in electronic systems.

Application

The 2SC5226A-4-TL-E is a high-voltage NPN transistor primarily used in applications such as power amplifiers, switching regulators, and general-purpose amplification. Its capabilities make it suitable for audio amplification, motor drivers, and signal processing in various electronic devices, including consumer electronics and industrial equipment.

Equivalent

The 2SC5226A-4-TL-E is an NPN transistor typically used in amplification and switching applications. Equivalent products include the 2SC5226, 2SC5226A, and similar NPN transistors like the BC547 or MPSU07, depending on specific application requirements. Always verify specifications such as voltage, current ratings, and package type before substitution.