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2SK2221-E
MOSFET N-CH 200V 8A TO3P
- 제조업체
- Mfr.부분 #2SK2221-E
- 패키지
- 데이터시트
- 재고 있음9838
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 10 V |
| Power Dissipation (Max) | 100W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3P |
| Package / Case | TO-3P-3, SC-65-3 |
| Base Product Number | 2SK2221 |
개요
Description
Manufactured using advanced silicon technology, the 2SK2221-E is designed to offer reliability and durability under various operating conditions. It is often packaged in a TO-220 or similar form factor, allowing for efficient heat dissipation. This MOSFET is used in a variety of devices, from consumer electronics to industrial equipment, due to its versatility and robust performance characteristics. Overall, the 2SK2221-E is a critical component for designers looking to implement effective power control and management in electronic systems.
Features
1. Voltage Rating: It typically offers a high drain-source voltage capability, making it suitable for handling significant power levels.
2. Current Capacity: The transistor can manage substantial currents, accommodating a wide range of power requirements in electronic circuits.
3. Fast Switching Speed: The 2SK2221-E is known for its fast switching capabilities, which enhances performance in high-speed applications.
4. Low On-Resistance: It features low on-resistance, reducing power loss and heat generation, which improves overall efficiency.
5. Robust Design: The MOSFET is designed to withstand high temperatures and electrical stress, ensuring reliable operation over extended periods.
6. Applications: Commonly used in power supply circuits, motor drivers, and other applications requiring efficient power control and management.
In summary, the 2SK2221-E is valued for its high voltage and current handling, fast switching, and low on-resistance, making it versatile for various electronic applications.
Package
Pinout
1. Gate (G): The gate is responsible for controlling the MOSFET's conduction state. By applying a voltage to the gate, the flow of current between the drain and source can be controlled.
2. Drain (D): The drain is where the current flows out of the transistor when it is in the "on" state. It is linked to the load that the MOSFET is controlling.
3. Source (S): The source is the terminal through which current enters the MOSFET. It is often connected to ground in many applications.
The 2SK2221-E is used primarily for switching and amplification in electronic circuits. Its characteristics make it suitable for high-speed switching applications.
Manufacturer
Application
Equivalent
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