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APT30D60BG
DIODE STD 600V 30A TO247 [B]
- 제조업체
- Mfr.부분 #APT30D60BG
- 패키지
- 데이터시트
- 재고 있음9123
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사양
| Part Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 30A |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 30 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 250 µA @ 600 V |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | TO-247 [B] |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | APT30D60 |
| Reverse Recovery Time (trr) | 85 ns |
개요
Description
This MOSFET is characterized by low on-resistance (RDS(on)), which enhances its efficiency by minimizing power loss during operation. It also has a fast switching speed, enabling it to handle high-frequency applications effectively. The APT30D60BG is typically housed in a TO-220 package, facilitating easy thermal management and integration into various circuit designs.
With its robust performance characteristics, the APT30D60BG is widely used in industrial and consumer electronics, making it a reliable choice for engineers looking to improve energy efficiency and performance in their designs.
Features
1. Voltage Rating: 600V, suitable for medium voltage applications.
2. Current Rating: 30A, allowing for substantial load handling.
3. Low Switching Losses: Enhanced efficiency in high-frequency operations.
4. Thermal Performance: Robust thermal stability, facilitating reliable operation at elevated temperatures.
5. Fast Switching Speed: Reduces the risk of overheating and improves overall efficiency.
6. Integrated Gate-Emitter Protection: Increases reliability and protects against voltage spikes.
7. Compact Package: Often available in TO-220 or similar packages, ensuring easy integration into circuits.
These features make the APT30D60BG suitable for demanding applications in industrial and renewable energy sectors.
Package
Pinout
1. Gate (G): Controls the switching of the device.
2. Collector (C): The main current-carrying terminal, where the load is connected.
3. Emitter (E): The terminal through which the current exits the device.
The arrangement often includes pins for the gate, collector, and emitter, facilitating easy integration into power electronic circuits. The IGBT is used in applications such as inverters, motor drives, and power supplies due to its efficient switching capabilities and high-voltage handling.
Manufacturer
Application
Equivalent
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