APT30GP60BDQ1G

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APT30GP60BDQ1G

IGBT PT 600V 100A TO247

  • 제조업체Microchip Technology
  • Mfr.부분 #APT30GP60BDQ1G
  • 패키지
  • 데이터시트
  • 재고 있음65

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사양

Series POWER MOS 7®
Part Status Active
IGBT Type PT
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 100 A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 30A
Power - Max 463 W
Switching Energy 260µJ (on), 250µJ (off)
Input Type Standard
Gate Charge 90 nC
Td (on/off) @ 25°C 13ns/55ns
Test Condition 400V, 30A, 5Ohm, 15V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247 [B]
Base Product Number APT30GP60
Current - Collector Pulsed (Icm) 120 A

개요

Description

APT30GP60BDQ1G is a high-performance N-channel power MOSFET designed for efficient switching applications. With a voltage rating of 600V and a continuous drain current of 30A, this device is suitable for various power management tasks, including power supplies, converters, and motor drives. Its low on-resistance allows for minimal power loss during operation, improving overall system efficiency.
Key features include a fast switching speed, making it ideal for high-frequency applications, and a robust thermal performance that ensures reliable operation under demanding conditions. The APT30GP60BDQ1G typically comes in a TO-220 package, facilitating easy thermal management and mounting in circuit designs. This MOSFET is commonly used in industrial, automotive, and consumer electronics applications where reliable power handling is critical.
For designers, understanding its key specifications, such as gate threshold voltage and maximum junction temperature, is essential for optimal performance in their respective applications.

Features

The APT30GP60BDQ1G is a high-performance power transistor designed for efficient switching applications. It features:
1. Type: N-channel MOSFET, suitable for various power applications.
2. Voltage Rating: Typically supports a drain-source voltage (V_DS) up to 60V.
3. Current Rating: Capable of handling continuous drain currents around 30A, making it ideal for high-power applications.
4. On-Resistance: Low R_DS(on), which minimizes conduction losses and improves efficiency.
5. Package Type: Available in a robust TO-220 or similar package, facilitating heat dissipation.
6. Gate Threshold Voltage: Designed for low gate drive requirements, which simplifies circuit design.
7. Applications: Suitable for use in power supplies, motor drives, and other high-efficiency power conversion systems.
Overall, the APT30GP60BDQ1G combines efficiency, high current capacity, and robust thermal performance, making it suitable for demanding electronic applications.

Package

The APT30GP60BDQ1G is typically packaged in a TO-220 form factor, which is a type of metal-encased package designed for high-power applications. This package type allows for effective heat dissipation and easy mounting on heatsinks.

Pinout

The APT30GP60BDQ1G is a power MOSFET with a pin count of 3. It is typically used in high-voltage applications, such as power management and switching.
The pin functions are as follows:
1. Gate (G): Controls the conduction state of the MOSFET; applying a voltage here allows current to flow between the drain and source.
2. Drain (D): The terminal through which the main current flows out of the MOSFET. In a switching application, this is where the load is connected.
3. Source (S): The terminal through which the current enters the MOSFET; it is usually connected to the ground or the negative side of the power supply.
The APT30GP60BDQ1G is designed for high efficiency and thermal performance in power applications.

Manufacturer

The APT30GP60BDQ1G is manufactured by Advanced Power Technology, Inc. (APT), a company specializing in the design and production of power semiconductor devices. APT is known for its innovation in power management solutions, including products such as MOSFETs, IGBTs, and other power modules used in various applications like motor drives, power supplies, and renewable energy systems. The company focuses on providing high-performance products for industries requiring efficient power conversion and management.

Application

The APT30GP60BDQ1G is a high-performance N-channel MOSFET primarily used in industrial applications, including motor drives, power converters, and power management circuits. Its features make it suitable for high-efficiency switching in automotive and renewable energy systems, such as solar inverters. Additionally, it can be utilized in consumer electronics and telecommunications for efficient power regulation and control.

Equivalent

The APT30GP60BDQ1G chip is an N-channel MOSFET. Equivalent products include:
1. IRF3205
2. STP30NF06
3. FQP30N06L
4. BUK7Y30-55
Always verify specifications like voltage, current ratings, and package types before substituting.

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