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AS4C16M16SA-6TIN

Name: AS4C16M16SA-6TIN
Rating: 4.7 (12 reviews)

IC DRAM 256MBIT PAR 54TSOP II

제조업체
Mfr.부분 #AS4C16M16SA-6TIN
패키지 54-TSOP
데이터시트 AS4C16M16SA-6TIN DataSheet
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사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	256Mb (16M x 16)
MemoryInterface	Parallel
ClockFrequency	166 MHz
WriteCycleTime-WordPage	12ns
AccessTime	5 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

개요

Description

The AS4C16M16SA-6TIN is a 256 Megabit (32 Megabytes) synchronous dynamic random-access memory (SDRAM) chip designed for high-performance applications. It consists of 16 memory banks and operates at a 166 MHz clock frequency, supporting a data rate of 333 MT/s (megatransfers per second). The chip is organized as 16 bits × 16 bits, making it suitable for various computing environments, particularly in consumer electronics, networking equipment, and embedded systems.
Key features include a low power supply voltage of 2.5V, fast access times, and enhanced reliability through features like self-refresh and deep power-down modes. The AS4C16M16SA-6TIN is packaged in a compact footprint, allowing for easy integration into space-constrained designs. It is compliant with industry standards, ensuring compatibility with a range of devices. This memory solution is ideal for applications requiring efficient data processing and storage capabilities.

Features

The AS4C16M16SA-6TIN is a synchronous dynamic random-access memory (SDRAM) chip, featuring the following key specifications:
1. Capacity: 256 Megabits (16 Megabytes).
2. Organization: Configured as 16 Meg x 16 bits.
3. Speed: Operates at a clock frequency of up to 166 MHz with a 6 ns access time.
4. Voltage: Typically operates at 3.3V.
5. Interface: Supports a 2n pre-fetch architecture, allowing efficient data transfer.
6. Packaging: Available in a 54-ball FBGA package for compact applications.
7. Temperature Range: Designed to operate within commercial temperature ranges, suitable for general-purpose usage.
This memory chip is widely used in applications requiring moderate memory capacity and speed, such as consumer electronics, networking equipment, and industrial applications. Its features contribute to reliable performance and efficient power consumption.

Package

The AS4C16M16SA-6TIN is packaged in a 54-pin TSOP II (Thin Small Outline Package) format.

Pinout

The AS4C16M16SA-6TIN is a 256Mb (16M x 16) DDR3 SDRAM (Synchronous Dynamic Random Access Memory) chip. It features a pin count of 54 pins in a TSOP II (Thin Small Outline Package) form factor.
The primary functions of the AS4C16M16SA-6TIN include:
1. Data Storage: It stores data in a 16-bit wide configuration, making it suitable for various applications requiring memory.
2. Synchronous Operation: It operates synchronously with the system clock, allowing for high-speed data transfer.
3. Low Power Consumption: Designed to operate at low voltage (typically 1.5V), enhancing energy efficiency.
4. Burst Mode: Supports burst accesses for increased throughput.
5. Refresh Function: Includes an automatic refresh function to maintain data integrity.
This memory is commonly used in computing applications, consumer electronics, and networking devices.

Manufacturer

The AS4C16M16SA-6TIN is manufactured by Alliance Semiconductor Corporation. Alliance Semiconductor specializes in designing and manufacturing high-performance memory solutions, including DRAM and SRAM products. The company focuses on providing advanced semiconductor solutions primarily for the automotive, industrial, and communication markets. Founded in 1995 and headquartered in California, Alliance Semiconductor operates as a fabless semiconductor company, meaning it outsources the manufacturing of its chips to foundries while investing in research and development to innovate in memory technology. Their products cater to various applications, ensuring compatibility with a wide range of electronic systems.

Application

The AS4C16M16SA-6TIN is a 256 Mb DDR3 SDRAM memory chip, commonly used in applications such as consumer electronics, networking equipment, telecommunications, automotive systems, and industrial applications. Its high-speed performance and low power consumption make it suitable for devices requiring efficient data processing, like smartphones, tablets, laptops, and embedded systems.

Equivalent

The AS4C16M16SA-6TIN is a 256Mb SDRAM chip. Equivalent products include the MT48LC16M16A2P-75, K4S561632H-667, and IS42S16400E-7B. Ensure compatibility in terms of voltage, speed, and package type when selecting alternatives. Always check the manufacturer's datasheets for specific features and ratings.