이미지는 참조용만

AS4C32M16SB-7TIN

Name: AS4C32M16SB-7TIN
Rating: 4.7 (12 reviews)

IC DRAM 512MBIT PAR 54TSOP II

제조업체
Mfr.부분 #AS4C32M16SB-7TIN
패키지 TSOP54
데이터시트 AS4C32M16SB-7TIN DataSheet
재고 있음2486

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package	Tray
ProductStatus	Active
MemoryType	Volatile
MemoryFormat	DRAM
Technology	SDRAM
MemorySize	512Mb (32M x 16)
MemoryInterface	Parallel
ClockFrequency	143 MHz
WriteCycleTime-WordPage	14ns
AccessTime	5.4 ns
Voltage-Supply	3V ~ 3.6V
OperatingTemperature	-40°C ~ 85°C (TA)
MountingType	Surface Mount
Package/Case	54-TSOP (0.400, 10.16mm Width)

개요

Description

The AS4C32M16SB-7TIN is a high-performance synchronous dynamic random-access memory (SDRAM) chip, specifically designed for various applications requiring efficient memory solutions. It features a 32M x 16-bit configuration, providing a total capacity of 512 megabits. With a 7 ns access speed, it is suitable for applications that demand fast data retrieval and processing, such as telecommunications, networking, and consumer electronics.
This memory chip operates at a voltage of 1.8V, which helps reduce power consumption, making it ideal for battery-operated devices. The AS4C32M16SB-7TIN also supports a range of operating frequencies, allowing for flexibility in design and integration into different systems. Additionally, it is available in a standard TSOP II package, which simplifies mounting and connection to circuit boards.
Overall, the AS4C32M16SB-7TIN is a reliable and efficient memory solution that meets the evolving needs of modern electronic applications.

Features

The AS4C32M16SB-7TIN is a 512Mb (32M x 16 bits) DDR3 SDRAM memory chip designed for high-performance applications. Key features include:
1. Density: 512 Megabits, organized as 32 Megabytes x 16 bits.
2. Speed: Operates at a data rate of up to 1600 MT/s.
3. Voltage: Low operating voltage of 1.5V, ensuring energy efficiency.
4. Package: Available in a 78-ball TFBGA (Thin Fine Ball Grid Array) package for compact design.
5. Burst Length: Supports burst lengths of 4 and 8, enhancing data transfer efficiency.
6. Latency: CAS Latency (CL) options range from 7 to 11, providing flexibility in performance.
7. Compatibility: Designed for various applications, including consumer electronics, networking equipment, and industrial devices.
This DDR3 SDRAM is ideal for applications requiring high-speed data access with reduced power consumption.

Package

The AS4C32M16SB-7TIN is packaged in a TSOP II (Thin Small Outline Package) format.

Pinout

The AS4C32M16SB-7TIN is a 512Mb (64MB) DDR3 SDRAM memory chip with a pin count of 78. It operates with a 16-bit data width and is designed for applications requiring high-speed memory.
Key functions include:
- Data Input/Output: Provides data transfer through DQ pins.
- Address Input: Accepts address signals through A0 to A13 pins to access memory locations.
- Control Signals: Utilizes control pins (e.g., RAS, CAS, WE) for memory operations such as read and write.
- Clock Input: Requires a clock signal for synchronization of data operations.
- Power Supply: Operates at a specified voltage (typically 1.5V).
This chip is suitable for various applications, including consumer electronics, computing, and telecommunications, where high-performance memory is essential.

Manufacturer

The AS4C32M16SB-7TIN is manufactured by Alliance Memory, Inc. Alliance Memory is a semiconductor company that specializes in the development and supply of memory products, including DRAM, SRAM, and EEPROM. The company focuses on providing high-performance and cost-effective memory solutions for a range of applications, including consumer electronics, industrial equipment, and automotive systems. Founded in 2006, Alliance Memory aims to support customers with both new and obsolete memory products, addressing the needs of manufacturers looking for reliable and long-term memory solutions. The AS4C32M16SB-7TIN is a specific type of asynchronous DRAM, designed for various electronic applications.

Application

The AS4C32M16SB-7TIN is a 512Mb DDR3 SDRAM memory chip commonly used in consumer electronics, networking equipment, telecommunications, automotive applications, and industrial devices. Its applications include smartphones, tablets, laptops, gaming consoles, and various embedded systems that require high-speed data processing and storage capabilities.

Equivalent

The AS4C32M16SB-7TIN is a 512Mb DDR3 SDRAM chip. Equivalent products include:
1. MT41J256M16HA-125
2. Hynix H5TQ2G83AFR
3. K4B4G1646D-BCK0
4. W634G2K6H-3
5. Samsung K4B4G1646D-BCK0
Always verify compatibility with your specific application requirements.