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AUIRFS8409-7P

Name: AUIRFS8409-7P
Rating: 4.7 (12 reviews)

MOSFET N-CH 40V 240A D2PAK

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Mfr.부분 #AUIRFS8409-7P
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데이터시트 AUIRFS8409-7P DataSheet
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사양

Series	HEXFET®
Part Status	Obsolete
Base Product Number	AUIRF8409
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	240A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	0.75mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	460 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	13975 pF @ 25 V
Power Dissipation (Max)	375W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	D2PAK (7-Lead)
Package	TO-263-7, D2PAK (6 Leads + Tab)
Packaging	Tube

개요

Description

AUIRFS8409-7P is a N‑channel enhancement‑mode power MOSFET from the AUIR/AOS family. It’s designed for high‑efficiency switching in compact power electronics, such as synchronous buck/boost regulators, motor drivers, and load switching in automotive and industrial applications. The device is offered in a surface‑mount package (the “-7P” suffix indicates a specific lead‑free package variant). Typical advantages include low on‑resistance, solid current capability, and fast switching performance to minimize conduction and switching losses. For exact electrical ratings (VDS, ID, RDS(on), gate thresholds), thermal data, package details, and safe operating area, refer to the official datasheet. If you’re selecting it for a design, verify the specific variant’s specifications and ensure proper gate drive and cooling.

Features

AUIRFS8409-7P features (Ri Data)
- N-channel enhancement-mode power MOSFET
- 60 V voltage rating (Vds) with low on-resistance for high-efficiency switching
- Logic-level gate drive (low Vgs threshold; usable from ~4.5–10 V)
- High drain current capability with low gate charge (fast switching, low drive power)
- Trench MOSFET technology for low Rds(on) and compact size
- Avalanche-rated with robust body diode for inductive-load protection
- Package: PowerPAK 7 (7P) SMT option with good thermal performance
- RoHS compliant; suitable for automotive/industrial DC-DC, motor drives, synchronous rectification
Note: For exact numbers (Rds(on), Id, packaging details), please consult the official Renesas datasheet.

Package

D2PAK (TO-263) surface-mount package.

Pinout

- Pin count: 7 pins (7‑lead SMD power package).
- Function: Power N‑channel enhancement MOSFET used for high‑speed switching. Typical pin assignments (refer to the datasheet for exact package pin numbering): Pin 1 = Gate; Pins 2–6 = Drain (multiple pins tied together and also connected to the exposed tab); Pin 7 = Source. Remaining package features: exposed drain tab for heat dissipation. Always confirm exact pin numbering and electrical connections from the manufacturer’s datasheet.

Manufacturer

Manufacturer: Alpha & Omega Semiconductor (AOS).
AOS is a fabless semiconductor company that designs and supplies power-management products—primarily power MOSFETs, analog/power ICs and related solutions for consumer electronics, computing, telecom and automotive markets.

Application

- High-efficiency switching in DC-DC converters (buck/boost) and point-of-load regulators
- Motor control circuits (BLDC and DC motors) requiring fast switching and low Rds(on)
- Automotive power electronics (load switches, battery management, voltage regulation)
- Solar inverters and power conversion stages
- Industrial switching power supplies and general power management