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BAT60A
10V 3A 580MV@1A SOD-323
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- Mfr.부분 #BAT60A
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- 재고 있음18195
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사양
| Part Status | Active |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 10 V |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 370 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 2.6 mA @ 8 V |
| Capacitance @ Vr, F | 35pF @ 5V, 1MHz |
| Mounting Type | Surface Mount |
| Package | SC-76, SOD-323 |
| Supplier Device Package | SOD-323 |
| Operating Temperature - Junction | 150°C |
| Packaging | Cut Tape (CT), Tape & Reel (TR) |
개요
Description
BAT60A is a dual Schottky barrier diode in an SOT‑23 package. The A variant typically means the two diodes share a common anode (two Schottky junctions with a single anode node). It provides fast switching and a very low forward-voltage drop, making it suitable for high‑speed rectification, OR-ing, clamping, and input protection in power supplies and microcontroller circuits. Typical ratings are on the order of ~60 V reverse voltage per diode and a few hundred milliamps of forward current per diode, with forward voltage around 0.2–0.4 V at small currents. Schottky construction means negligible reverse recovery time. For exact pinout, current, voltage ratings, and package details, consult the specific datasheet from the manufacturer.
Features
Here are the key features of BAT60A:
- Dual Schottky barrier diodes in SOT-23 package.
- Common anode configuration (A = anode common); two diodes share anode, cathodes separate.
- VRRM: 60 V per diode.
- IF(AV): 200 mA per diode.
- Low forward voltage drop: typically ~0.25–0.40 V at around 10 mA.
- Very fast switching with no reverse-recovery time (Schottky).
- Reverse leakage current small at room temp; increases with temperature (typical µA range at 25–60 V).
- Temperature range: −55 to +125 °C.
- RoHS-compliant, Pb-free.
Applications: high-speed rectification, logic-level switching, clamping/level-shifting, and OR-ing in compact circuits.
- Dual Schottky barrier diodes in SOT-23 package.
- Common anode configuration (A = anode common); two diodes share anode, cathodes separate.
- VRRM: 60 V per diode.
- IF(AV): 200 mA per diode.
- Low forward voltage drop: typically ~0.25–0.40 V at around 10 mA.
- Very fast switching with no reverse-recovery time (Schottky).
- Reverse leakage current small at room temp; increases with temperature (typical µA range at 25–60 V).
- Temperature range: −55 to +125 °C.
- RoHS-compliant, Pb-free.
Applications: high-speed rectification, logic-level switching, clamping/level-shifting, and OR-ing in compact circuits.
Package
BAT60A is a dual Schottky diode in a SOT-23 package (3 pins), typically with a common-anode configuration.
Pinout
Pin count: 3 pins (SOT-23 package).
Function: Dual Schottky barrier diode with a common anode configuration (two diodes sharing the same anode; separate cathodes). Used for high-speed switching, OR-ing, or input protection/clamping.
Function: Dual Schottky barrier diode with a common anode configuration (two diodes sharing the same anode; separate cathodes). Used for high-speed switching, OR-ing, or input protection/clamping.
Manufacturer
BAT60A is manufactured by Vishay Intertechnology. Vishay is a global semiconductor and passive-component company that designs and manufactures diodes, transistors, resistors, capacitors, and related components.
Application
BAT60A is a dual Schottky barrier diode (low forward voltage, fast switching). Common applications:
- RF detectors/mixers and envelope detectors
- Fast rectification in switching regulators and low‑voltage supplies
- Input protection, clamping, and reverse‑polarity protection for MCUs/logic
- Rail OR-ing and protection in compact electronics
- Level shifting with low capacitance in portable RF/IF circuits
- RF detectors/mixers and envelope detectors
- Fast rectification in switching regulators and low‑voltage supplies
- Input protection, clamping, and reverse‑polarity protection for MCUs/logic
- Rail OR-ing and protection in compact electronics
- Level shifting with low capacitance in portable RF/IF circuits
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