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BC846BM3T5G
TRANS NPN 65V 0.1A SOT723
- 제조업체
- Mfr.부분 #BC846BM3T5G
- 패키지 SOT-723
- 데이터시트 BC846BM3T5G DataSheet
- 재고 있음13861
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 100 mA |
| Voltage-CollectorEmitterBreakdown(Max) | 65 V |
| VceSaturation(Max)@IbIc | 600mV @ 5mA, 100mA |
| Current-CollectorCutoff(Max) | 15nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 200 @ 2mA, 5V |
| Power-Max | 265 mW |
| Frequency-Transition | 100MHz |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-723 |
개요
Description
With a current gain (hFE) typically ranging from 100 to 600, the BC846BM3T5G is useful in audio and signal processing circuits, as well as in digital applications requiring fast switching. It operates within a temperature range of -55°C to +150°C, enhancing its versatility for various environments.
The device is often used in consumer electronics, automotive systems, and telecommunication equipment. Its low noise and high gain characteristics make it ideal for pre-amplifier stages and other applications where signal integrity is crucial. Overall, the BC846BM3T5G is a reliable choice for engineers looking for efficient transistor solutions in compact designs.
Features
1. Type: NPN Bipolar Junction Transistor (BJT).
2. Maximum Collector-Emitter Voltage (Vce): 65V, allowing for high voltage applications.
3. Maximum Collector Current (Ic): 100mA, suitable for low to moderate current tasks.
4. DC Current Gain (hFE): Ranges from 100 to 800, ensuring efficient amplification.
5. Power Dissipation: Typically around 250mW, which provides a reasonable thermal performance.
6. Package: Offered in SOT-23 packaging, ideal for space-constrained applications.
7. Frequency Response: Capable of operating at frequencies up to 100 MHz, useful for high-speed switching.
Overall, the BC846BM3T5G is versatile and reliable for use in audio amplifiers, signal processing, and switching circuits.
Package
Pinout
1. Collector (C) - This pin is used to collect the charge carriers (electrons for NPN transistors) and is typically connected to the load.
2. Base (B) - This pin controls the transistor's operation by allowing a small input current to modulate the larger current flowing from collector to emitter.
3. Emitter (E) - This is the terminal through which charge carriers exit the transistor, and it is usually connected to ground or a reference voltage.
The BC846BM3T5G is commonly used in amplification and switching applications, and it is suitable for low-power applications due to its compact size and efficiency.
Manufacturer
Application
Equivalent
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