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BCP56T1G
TRANS NPN 80V 1A SOT223
- 제조업체
- Mfr.부분 #BCP56T1G
- 패키지 SOT-223-4
- 데이터시트
- 재고 있음3629
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| TransistorType | NPN |
| Current-Collector(Ic)(Max) | 1 A |
| Voltage-CollectorEmitterBreakdown(Max) | 80 V |
| VceSaturation(Max)@IbIc | 500mV @ 50mA, 500mA |
| Current-CollectorCutoff(Max) | 100nA (ICBO) |
| DCCurrentGain(hFE)(Min)@IcVce | 40 @ 150mA, 2V |
| Power-Max | 1.5 W |
| Frequency-Transition | 130MHz |
| OperatingTemperature | -65°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | TO-261-4, TO-261AA |
개요
Description
The BCP56T1G is particularly valued for its low noise characteristics and high gain, making it ideal for RF applications, audio amplifiers, and various signal processing tasks. It comes in a surface mount package (SOT-23), facilitating compact PCB designs.
Key specifications include a current gain (hFE) of 100-400 at a specified Ic, and a maximum power dissipation of about 625 mW. The BCP56T1G also has a fast switching speed, which is crucial for applications requiring rapid signal processing. Overall, it is a versatile transistor widely used in consumer electronics and industrial applications.
Features
- Type: NPN transistor
- Maximum Collector-Emitter Voltage (Vce): 45V
- Maximum Collector Current (Ic): 800mA
- Maximum Power Dissipation (Pd): 500mW
- DC Current Gain (hFE): Typically ranges from 100 to 800, depending on the collector current.
- Package: Available in TO-92 and other forms, making it suitable for various applications.
- Frequency Response: Capable of operating at frequencies up to several MHz, making it versatile for RF applications.
- Low Saturation Voltage: Ensures efficient operation in switching applications.
- Temperature Range: Operates effectively within a wide temperature range, enhancing reliability.
These features make the BCP56T1G suitable for use in audio amplifiers, signal processing, and low-power switching applications.
Package
Pinout
1. Base (B): This is the control terminal that regulates the current flow between the collector and emitter.
2. Collector (C): This terminal is where the main current flows into the transistor from the power source.
3. Emitter (E): This terminal allows current to flow out of the transistor.
The BCP56T1G is commonly used for switching and amplification applications in various electronic circuits, offering a maximum collector current of 800 mA and a maximum collector-emitter voltage of 45 V. Its compact design and efficiency make it suitable for integration in both consumer and industrial applications.
Manufacturer
Application
Equivalent
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