이미지는 참조용만

BSC070N10NS3 G

Name: BSC070N10NS3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 100V 90A TDSON-8 OptiMOS 3

제조업체
Mfr.부분 #BSC070N10NS3 G
패키지
데이터시트 BSC070N10NS3 G DataSheet
재고 있음5207

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Packaging	MouseReel
Standard Pack Qty	5000

개요

Description

The BSC070N10NS3 G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for efficient switching applications. It features a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) of 70A, making it suitable for high-power applications. This MOSFET is characterized by low on-resistance (R_DS(on)), which enhances its efficiency by reducing power losses during operation.
The BSC070N10NS3 G is housed in a TO-220 package, facilitating effective heat dissipation, which is critical for maintaining performance in demanding environments. Its gate threshold voltage (V_GS(th)) is designed to ensure compatibility with various gate drive voltages, allowing for flexibility in circuit design.
Common applications include power management, motor control, and DC-DC converters, especially in automotive and industrial sectors. Proper thermal management and suitable drive circuitry are essential to maximize its performance and reliability in any application.

Features

The BSC070N10NS3 G is a N-channel MOSFET designed for efficient power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of 70A, allowing it to manage substantial loads.
3. R_DS(on): Low on-resistance (R_DS(on)) typically around 10mΩ at V_GS = 10V, which helps in reducing power losses during operation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be driven effectively with lower voltages.
5. Fast Switching: Designed for high-speed switching applications, it supports efficient operation in power electronics.
6. Package: Available in a TO-220 package, which facilitates effective thermal management.
These features make the BSC070N10NS3 G suitable for applications in motor control, power supplies, and converters.

Package

The BSC070N10NS3 G is packaged in a TO-220 format. This package type is commonly used for power transistors and provides good thermal performance and electrical characteristics, suitable for high-power applications.

Pinout

The BSC070N10NS3 G is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which the main current flows out of the MOSFET.
3. Source (S): The terminal through which the main current enters the MOSFET; typically connected to ground in low-side switching applications.
The device is designed for high-efficiency switching applications, featuring low on-resistance and high current handling capabilities. It is often used in power management, DC-DC converters, and other applications requiring efficient switching components.

Manufacturer

The BSC070N10NS3 G is manufactured by Bosch, a global engineering and technology company based in Germany. Bosch operates across various sectors, including mobility solutions, industrial technology, consumer goods, and energy and building technology. The company is well-known for its innovation in automotive components, home appliances, and industrial technology, among other areas. Bosch has a strong emphasis on research and development, aiming to drive advancements in automation and connectivity in its products. The BSC070N10NS3 G is a specific type of N-channel MOSFET used in power management and related applications.

Application

The BSC070N10NS3 G is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drivers, and switching power supplies. It is suitable for high-efficiency power switching in consumer electronics, industrial equipment, and renewable energy systems. Its low on-resistance and high-speed switching capabilities make it ideal for enhancing energy efficiency in various electronic circuits.

Equivalent

The BSC070N10NS3 G is an N-channel MOSFET. Equivalent products include the IRF1010, STP10NM60, and FDS6680. Always check specifications such as voltage, current rating, and Rds(on) for compatibility in your application.