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BSC077N12NS3G
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- Mfr.부분 #BSC077N12NS3G
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사양
| Manufacturer | Infineon Technologies |
| Package | TDSON-8-EP(5x6) |
| Operating Temperature | -55℃~+150℃ |
| Drain to Source Voltage | 120V |
| Pd - Power Dissipation | 139W |
| Type | 1 N-channel |
개요
Description
BSC077N12NS3G is a type of MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency power applications. It features a low on-resistance (RDS(on)), allowing it to handle high currents with minimal power loss, which enhances overall system efficiency. The device is typically used in various applications, including power management, DC-DC converters, and switch mode power supplies.
This MOSFET is part of the newer generations of semiconductors that support higher switching speeds and thermal performance, making it suitable for compact and energy-efficient designs. It usually comes in a TO-220 package, which aids in easy thermal management.
Key parameters to consider when using BSC077N12NS3G include maximum drain-source voltage (VDS), continuous drain current (ID), and gate threshold voltage (VGS(th)). Overall, this transistor is an excellent choice for engineers looking to optimize power efficiency in their electronic designs.
This MOSFET is part of the newer generations of semiconductors that support higher switching speeds and thermal performance, making it suitable for compact and energy-efficient designs. It usually comes in a TO-220 package, which aids in easy thermal management.
Key parameters to consider when using BSC077N12NS3G include maximum drain-source voltage (VDS), continuous drain current (ID), and gate threshold voltage (VGS(th)). Overall, this transistor is an excellent choice for engineers looking to optimize power efficiency in their electronic designs.
Features
The BSC077N12NS3G is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) of up to 77A, allowing for robust power handling.
3. Low RDS(on): With a low on-resistance (RDS(on)) of around 12 mΩ at a gate-source voltage (VGS) of 10V, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching speeds, it is ideal for applications such as power supplies and motor drives.
5. Thermal Performance: It features good thermal stability, supporting operation in a range of temperatures with sufficient heat dissipation.
6. Package Type: Housed in a DPAK package, it offers a compact size with effective heat dissipation properties.
This MOSFET is commonly used in applications such as DC-DC converters, inverters, and industrial motor control systems, where efficiency and reliability are critical.
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 120V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (ID) of up to 77A, allowing for robust power handling.
3. Low RDS(on): With a low on-resistance (RDS(on)) of around 12 mΩ at a gate-source voltage (VGS) of 10V, it minimizes conduction losses, enhancing efficiency.
4. Fast Switching: Designed for fast switching speeds, it is ideal for applications such as power supplies and motor drives.
5. Thermal Performance: It features good thermal stability, supporting operation in a range of temperatures with sufficient heat dissipation.
6. Package Type: Housed in a DPAK package, it offers a compact size with effective heat dissipation properties.
This MOSFET is commonly used in applications such as DC-DC converters, inverters, and industrial motor control systems, where efficiency and reliability are critical.
Package
The BSC077N12NS3G is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation and is designed for efficient thermal management in power applications.
Pinout
The BSC077N12NS3G is a N-channel MOSFET typically used in power applications. It features a TO-220 package and has a pin count of three. The pin functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on or off, enabling or disabling current flow between the drain and source.
2. Drain (D): This pin is where the load current flows out of the MOSFET. It connects to the positive side of the load in a typical configuration.
3. Source (S): This pin is connected to the ground or the negative side of the load. It serves as the return path for the current when the MOSFET is in the ‘on’ state.
In summary, the BSC077N12NS3G has three pins: Gate, Drain, and Source, serving critical roles in controlling power electronic circuits.
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to switch on or off, enabling or disabling current flow between the drain and source.
2. Drain (D): This pin is where the load current flows out of the MOSFET. It connects to the positive side of the load in a typical configuration.
3. Source (S): This pin is connected to the ground or the negative side of the load. It serves as the return path for the current when the MOSFET is in the ‘on’ state.
In summary, the BSC077N12NS3G has three pins: Gate, Drain, and Source, serving critical roles in controlling power electronic circuits.
Manufacturer
The BSC077N12NS3G is manufactured by Infineon Technologies AG, a German semiconductor company. Infineon specializes in providing a wide range of semiconductor solutions, including power semiconductors, automotive systems, and digital security. The company focuses on technologies that enable efficient energy management, mobility, and security solutions across various industries, including automotive, industrial, and consumer electronics. Infineon is known for its innovation in areas such as power management, automotive electronics, and microcontrollers.
Application
The BSC077N12NS3G is a Power MOSFET primarily used in applications like DC-DC converters, industrial power supplies, motor drives, and automotive systems. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, renewable energy systems, and electric vehicles.
Equivalent
The BSC077N12NS3G is a N-channel MOSFET from Infineon Technologies. Equivalent products include the IRF3205 from Infineon, the FDS6910 from ON Semiconductor, and the STP75NF75 from STMicroelectronics. Always check specific datasheets for exact parameters like VDS, ID, RDS(on), and package type to ensure compatibility.
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