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BSC190N12NS3 G

Name: BSC190N12NS3 G
Rating: 4.7 (12 reviews)

MOSFETs N-Ch 120V 44A TDSON-8 OptiMOS 3

제조업체
Mfr.부분 #BSC190N12NS3 G
패키지
데이터시트 BSC190N12NS3 G DataSheet
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사양

Packaging	MouseReel
Standard Pack Qty	5000

개요

Description

BSC190N12NS3 G is an introductory biology course focusing on fundamental concepts in biological sciences. It covers topics such as cell structure and function, genetics, evolution, and ecological systems. The course emphasizes critical thinking and scientific inquiry, providing students with a foundational understanding of life processes and the diversity of living organisms. Through lectures, laboratory work, and discussions, students engage with scientific methods and develop skills in observation, experimentation, and data analysis. This course is designed for those pursuing a degree in biological sciences or related fields, ensuring they have a solid grasp of essential biological principles.

Features

The BSC190N12NS3 G is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 1200V.
2. Current Handling: Capable of continuous drain current (I_D) up to 190A, making it suitable for high-power applications.
3. Low On-Resistance: It offers a low R_DS(on) value, which minimizes power loss and improves efficiency.
4. Fast Switching: Designed for rapid switching, it supports high-frequency operation, ideal for converters and inverters.
5. Thermal Performance: Features a robust package that aids in effective heat dissipation, enhancing reliability in demanding conditions.
6. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is optimized for effective turn-on characteristics.
These features make the BSC190N12NS3 G suitable for applications in power supplies, motor control, and renewable energy systems.

Package

The BSC190N12NS3 G is packaged in a TO-247 format. This package type is commonly used for high-power transistors and IGBTs, featuring a robust design that allows for efficient heat dissipation and easy mounting on heat sinks.

Pinout

The BSC190N12NS3 G is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied here allows the device to conduct.
2. Drain (D): The current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the lower voltage side of the circuit. It is the reference point for the gate voltage.
4. Tab (or Heat Sink): Often connected to the source for thermal management; it helps in heat dissipation.
The BSC190N12NS3 G is designed for high-efficiency applications and is suitable for switching and linear applications in power management. It features low on-resistance and high-speed switching capabilities, making it ideal for use in power supply circuits and motor control applications.

Manufacturer

The BSC190N12NS3 G is manufactured by Infineon Technologies AG, a global semiconductor manufacturer headquartered in Neubiberg, Germany. Infineon specializes in the development of semiconductors and system solutions for various applications, including automotive, industrial power control, and security technologies. The company focuses on energy efficiency, mobility, and security solutions, catering to a diverse range of industries. Infineon is known for its innovative products in power electronics, microcontrollers, and sensor technologies.

Application

The BSC190N12NS3 G is a high-performance N-channel MOSFET primarily used in power management applications. Its key areas of application include:
1. DC-DC converters
2. Motor drives
3. Power supplies
4. Switching applications
5. Renewable energy systems
This component is ideal for improving efficiency and thermal performance in various electronic devices.

Equivalent

The BSC190N12NS3 G chip is a N-channel MOSFET from Infineon. Equivalent products include the IRF3205, STP75NF75, and FDP75N06. Always verify specifications such as voltage, current rating, and RDS(on) before substitution.