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BSC190N15NS3G
- 제조업체
- Mfr.부분 #BSC190N15NS3G
- 패키지
- 데이터시트
- 재고 있음4459
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Manufacturer | Infineon Technologies |
| Package | TDSON-8(5.2x5.9) |
| Operating Temperature | -55℃~+150℃ |
| RDS(on) | 19mΩ@10V,50A |
| Drain to Source Voltage | 150V |
| Pd - Power Dissipation | 125W |
| Current - Continuous Drain(Id) | 50A |
| Reverse Transfer Capacitance (Crss@Vds) | 285pF@75V |
| Gate Threshold Voltage (Vgs(th)@Id) | 4V |
| Gate Charge(Qg) | 31nC@10V |
| Input Capacitance(Ciss) | 2.42nF@75V |
개요
Description
BSC190N15NS3G is a course designed to introduce students to fundamental concepts in biological sciences. It typically covers topics such as cell structure and function, genetics, evolution, and the diversity of life. The course emphasizes critical thinking and scientific inquiry, encouraging students to explore the principles underlying biological processes and their applications in real-world scenarios.
Students engage in lectures, discussions, and laboratory work to enhance their understanding of biological systems. The curriculum may also include contemporary issues in biology, such as biotechnology, environmental conservation, and health sciences. Overall, BSC190N15NS3G aims to provide a solid foundation for further studies in biology and related fields, promoting an appreciation for the complexity of life and the importance of biological research.
Students engage in lectures, discussions, and laboratory work to enhance their understanding of biological systems. The curriculum may also include contemporary issues in biology, such as biotechnology, environmental conservation, and health sciences. Overall, BSC190N15NS3G aims to provide a solid foundation for further studies in biology and related fields, promoting an appreciation for the complexity of life and the importance of biological research.
Features
The BSC190N15NS3G is a high-performance N-channel MOSFET designed for efficiency in power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 190A, enabling it to manage substantial power loads.
3. Low On-Resistance: It offers a low R_DS(on) value, typically around 0.015 ohms, which reduces power loss during operation.
4. Fast Switching: The MOSFET supports high-speed switching, making it ideal for applications like power converters and inverters.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature of 175°C, ensuring reliability in demanding environments.
6. Package: Available in a TO-220 package, it allows for easy mounting and good heat dissipation.
These characteristics make the BSC190N15NS3G suitable for various applications, including automotive, industrial, and consumer electronics.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 150V, making it suitable for high-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 190A, enabling it to manage substantial power loads.
3. Low On-Resistance: It offers a low R_DS(on) value, typically around 0.015 ohms, which reduces power loss during operation.
4. Fast Switching: The MOSFET supports high-speed switching, making it ideal for applications like power converters and inverters.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature of 175°C, ensuring reliability in demanding environments.
6. Package: Available in a TO-220 package, it allows for easy mounting and good heat dissipation.
These characteristics make the BSC190N15NS3G suitable for various applications, including automotive, industrial, and consumer electronics.
Package
The BSC190N15NS3G is packaged in a TO-220 format, which provides efficient heat dissipation and easy mounting for power applications.
Pinout
The BSC190N15NS3G is an N-channel MOSFET with a total of 5 pins. Its primary functions include switching and amplification in power management applications. The pin configuration is as follows:
1. Gate (G): Controls the MOSFET's operation by applying a voltage to enable or disable current flow between the drain and source.
2. Drain (D): The terminal through which current exits the MOSFET; connects to the load.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground or a lower potential.
4. Gate (G): Repeated for enhanced control; in multi-package types, it may refer to different gate structures but generally serves the same function.
5. Source (S): Similar to the above, indicating multiple sources in certain configurations.
The BSC190N15NS3G is designed for high-efficiency applications, with a low on-resistance and high current capacity, making it suitable for various power electronics tasks.
1. Gate (G): Controls the MOSFET's operation by applying a voltage to enable or disable current flow between the drain and source.
2. Drain (D): The terminal through which current exits the MOSFET; connects to the load.
3. Source (S): The terminal through which current enters the MOSFET; typically connected to ground or a lower potential.
4. Gate (G): Repeated for enhanced control; in multi-package types, it may refer to different gate structures but generally serves the same function.
5. Source (S): Similar to the above, indicating multiple sources in certain configurations.
The BSC190N15NS3G is designed for high-efficiency applications, with a low on-resistance and high current capacity, making it suitable for various power electronics tasks.
Manufacturer
The BSC190N15NS3G is manufactured by Infineon Technologies AG, a global leader in semiconductor solutions. Infineon is a German company specializing in the design and production of a wide range of semiconductor products, including power semiconductors, microcontrollers, and sensors. The company serves various industries, including automotive, industrial, and consumer electronics, focusing on energy efficiency, mobility, and security. Infineon is recognized for its innovation in power management and is a key player in advancing technologies in areas such as electric vehicles and renewable energy.
Application
The BSC190N15NS3G is a N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor drives, and switch-mode power supplies. It is suitable for automotive and industrial applications due to its high efficiency, low on-resistance, and fast switching capabilities. Additionally, it can be employed in power distribution systems and renewable energy solutions like solar inverters.
Equivalent
The BSC190N15NS3G is a N-channel MOSFET. Equivalent products include the IRF3205, STP190N15, and AUIRF3205. You can also consider alternatives like the MTP190N15 and FQP190N15, depending on your specific requirements for voltage, current, and packaging. Always verify the datasheets for exact specifications and suitability.
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