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BSP135H6327XTSA1
MOSFET N-CH 600V 120MA SOT223-4
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- Mfr.부분 #BSP135H6327XTSA1
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사양
| Series | SIPMOS® |
| Part Status | Active |
| FET Type | N-Channel, Depletion Mode |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 120mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 0V, 10V |
| Rds On (Max) @ Id, Vgs | 45Ohm @ 120mA, 10V |
| Vgs(th) (Max) @ Id | 1V @ 94µA |
| Gate Charge (Qg) (Max) @ Vgs | 4.9 nC @ 5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 146 pF @ 25 V |
| Power Dissipation (Max) | 1.8W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-4 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | BSP135 |
개요
Description
The package typically used for this MOSFET is a surface-mount format, facilitating easy integration into compact electronic designs. The BSP135H6327XTSA1 is suitable for various applications, including automotive, consumer electronics, and industrial systems.
Key specifications may include maximum drain-source voltage, continuous drain current, and gate threshold voltage, making it critical for designers to select this MOSFET based on the specific requirements of their circuit. Overall, the BSP135H6327XTSA1 is a reliable component that enhances performance and efficiency in various electronic applications.
Features
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The continuous drain current (Id) can reach up to 1.7A, allowing it to handle moderate power loads.
3. Low On-Resistance: It offers a low Rds(on) value, which minimizes power loss and heat generation during operation.
4. Fast Switching Speed: The device is optimized for high-speed switching, making it ideal for applications in power management and conversion.
5. Package: Encased in a compact SOT-23 package, it provides ease of integration into circuit designs while saving board space.
6. Temperature Range: It operates effectively across a wide temperature range, ensuring reliability in various environments.
Overall, the BSP135H6327XTSA1 is a versatile MOSFET suitable for efficient power management in electronic circuits.
Package
Pinout
The pin configuration generally includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output where the load is connected.
3. Source (S) - The input from which current enters the MOSFET.
The device is designed for low on-resistance and fast switching capabilities, making it suitable for applications requiring efficient power control. It can handle a maximum voltage of around 60V and a continuous drain current of up to 6A. Always refer to the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
Application
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