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BSP170P

Name: BSP170P
Rating: 4.7 (12 reviews)

MOSFET P-CH 60V 1.9A SOT223

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Mfr.부분 #BSP170P
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데이터시트 BSP170P DataSheet
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사양

Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	1.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	300mOhm @ 1.9A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±20V
Power Dissipation (Max)	1.8W (Ta)
Operating Temperature	-55°C ~ 155°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-4
Package / Case	TO-261-4, TO-261AA

개요

Description

BSP170P is a foundational course designed to introduce students to the principles of Business and Strategic Planning. It covers essential topics such as market analysis, competitive strategy, resource allocation, and decision-making frameworks. The course emphasizes the importance of strategic thinking in various business contexts, encouraging students to develop analytical skills and apply strategic concepts to real-world scenarios.
Through case studies, group projects, and interactive discussions, participants gain insights into the dynamics of business environments and the tools necessary for effective planning. Additionally, the course may explore contemporary issues such as digital transformation, sustainability, and innovation in strategy formulation.
Overall, BSP170P serves as a stepping stone for students pursuing careers in business management, entrepreneurship, or consultancy, equipping them with the knowledge and skills to navigate complex business challenges.

Features

The BSP170P is an N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of around 60V, making it suitable for various switching applications.
2. Current Rating: It can handle a continuous drain current (I_D) of about 6A, allowing it to drive moderate loads effectively.
3. Low R_DS(on): With a low on-resistance (typically around 0.5 ohms), it minimizes power loss during operation, enhancing efficiency.
4. Fast Switching: The device is designed for rapid switching speeds, which is beneficial in high-frequency applications.
5. Package Type: The BSP170P is typically available in a TO-220 package, facilitating heat dissipation and ease of mounting.
6. Gate Threshold Voltage: It has a low gate threshold voltage (V_GS(th)), enabling it to be driven by low-voltage logic levels.
These features make the BSP170P suitable for use in power management, amplifiers, and motor control applications.

Package

The BSP170P is typically available in a TO-92 package type. This is a plastic package commonly used for transistors, providing good thermal performance and ease of handling in electronic applications.

Pinout

The BSP170P is an N-channel MOSFET that typically comes in a TO-92 package, featuring three pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows the device to conduct between the drain and source.
2. Drain (D): This pin is connected to the load. The current flows out of the drain when the MOSFET is turned on.
3. Source (S): This pin is connected to the ground or the negative side of the circuit. Current enters the MOSFET through the source.
The BSP170P is commonly used for low-power switching applications and can handle a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of around 300mA.

Manufacturer

The BSP170P is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components. It was spun off from NXP Semiconductors in 2017 and focuses on high-volume manufacturing of semiconductor devices. Nexperia is known for its commitment to quality and reliability, providing a wide range of products for various applications in automotive, industrial, and consumer electronics sectors. The BSP170P itself is a low-voltage N-channel MOSFET commonly used in switching applications.

Application

The BSP170P is a low-power N-channel MOSFET commonly used in applications such as switching power supplies, low-side switching, signal amplification, and driver circuits. It is suitable for portable devices, battery management systems, and low-voltage applications due to its low gate threshold voltage and high efficiency. Additionally, it can be utilized in audio amplification and general-purpose switching tasks in electronic circuits.

Equivalent

The BSP170P is a low-power N-channel MOSFET. Equivalent products include the 2N7000, BS170, and MMBT3904. Please verify specifications such as voltage and current ratings when substituting, as they may vary slightly between models.