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BUK6D120-60PX

Name: BUK6D120-60PX
Rating: 4.7 (12 reviews)

MOSFET P-CH 60V 3A/8A 6DFN

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Mfr.부분 #BUK6D120-60PX
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사양

Supplier	Nexperia USA Inc.
Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, TrenchMOS™
ProductStatus	Active
FETType	P-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	3A (Ta), 8A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	4.5V, 10V
RdsOn(Max)@IdVgs	120mOhm @ 3A, 10V
Vgs(th)(Max)@Id	3.2V @ 250µA
GateCharge(Qg)(Max)@Vgs	18 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	724 pF @ 30 V
PowerDissipation(Max)	2.3W (Ta), 15W (Tc)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	DFN2020MD-6

개요

Description

BUK6D120-60PX is a high-voltage, high-current IGBT (insulated-gate bipolar transistor) from STMicroelectronics’ BUK family, intended for power-switching in applications like motor drives, solar inverters, power supplies, UPS, and welding equipment. The “D” in the part name often indicates an integrated diode, making it convenient for flyback/switching use in single-device solutions. It is designed for fast switching and robust performance in a compact surface-mount package (PX suffix). Typical characteristics point to a blocking voltage around 1.2 kV and tens of amps of current, with standard IGBT gate-drive needs. For exact electrical ratings, switching specs, packaging details, and thermal data, consult the official BUK6D120-60PX datasheet.

Features

Key features of BUK6D120-60PX (typical):
- 1200 V N-channel trench MOSFET
- 60 A continuous drain current
- Low on-resistance for efficient conduction
- Fast switching with reduced gate charge
- Avalanche ruggedness for inductive-load protection
- Designed for high-voltage automotive/industrial use
- Available in power packages (surface-mount) for easy high-density layouts
Note: For exact Rds(on), gate threshold, Qg, packaging, and qualification (AEC-rated options), please refer to the official datasheet.

Package

The BUK6D120-60PX is an SMD power MOSFET in a DPAK (TO-252) package. The "PX" suffix typically denotes Pb‑free/halogen‑free material and tape‑and‑reel shipping.

Pinout

Pin count: 3 (plus a metal tab/heat-sink).
Pin functions:
- Pin 1 — Gate: control terminal (voltage-driven).
- Pin 2 — Drain: power input; the metal tab is typically connected to the drain for heatsinking.
- Pin 3 — Source: return/ground connection for the channel.
Device function: an N‑channel enhancement‑mode power MOSFET used as a voltage‑controlled switching element (high‑speed, low‑loss power switching for DC/DC converters, motor drives, etc.).

Application

BUK6D120-60PX is a high-voltage, high-current IGBT module. Typical applications include:
- AC motor drives and pumps
- Switch‑mode power supplies and DC‑AC inverters
- Renewable‑energy inverters (PV, wind)
- Uninterruptible power supplies (UPS)
- Welding and induction heating
- General industrial power‑conversion equipment

Equivalent

I don’t have a reliable cross-reference for BUK6D120-60PX without its key specs. Please confirm VDS, ID (continuous/pulsed), RDS(on), package (e.g., DPAK/TO‑220), and application (switching/synchronous rectifier). With those I’ll list direct equivalents from Infineon, ST, Vishay, IR, Nexperia, etc.