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BUK7K17-60E
Nexperia
- 제조업체
- Mfr.부분 #BUK7K17-60E
- 패키지
- 데이터시트
- 재고 있음25370
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
BUK7K17-60E is a N-channel MOSFET designed for high-efficiency power switching applications. It features a low on-resistance, which minimizes power losses during operation, making it suitable for use in applications such as power supplies, motor drivers, and DC-DC converters. Key specifications include a maximum drain-source voltage (Vds) of 60V and a continuous drain current (Id) rating of 70A, though actual performance will depend on thermal management and operational conditions. The device is typically housed in a TO-220 package, providing good thermal performance and ease of mounting on heat sinks. Its fast switching capabilities also make it suitable for high-frequency applications. Overall, the BUK7K17-60E is favored for its reliability and efficiency in power management circuits.
Features
The BUK7K17-60E is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 70A, enabling it to manage significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 7 mΩ, which minimizes conduction losses during operation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature (T_J) of up to 175°C, ensuring reliability under high loads.
6. Package Type: The device is available in a TO-220 package, which facilitates effective heat dissipation.
These features make the BUK7K17-60E suitable for various applications in power management and conversion.
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 70A, enabling it to manage significant power loads.
3. R_DS(on): It offers a low on-resistance (R_DS(on)) of approximately 7 mΩ, which minimizes conduction losses during operation.
4. Fast Switching: The MOSFET is designed for fast switching speeds, making it ideal for applications like DC-DC converters and motor drives.
5. Thermal Performance: It features a robust thermal performance, with a maximum junction temperature (T_J) of up to 175°C, ensuring reliability under high loads.
6. Package Type: The device is available in a TO-220 package, which facilitates effective heat dissipation.
These features make the BUK7K17-60E suitable for various applications in power management and conversion.
Package
The BUK7K17-60E is typically packaged in a DPAK (TO-252) or similar surface-mount package type.
Pinout
The BUK7K17-60E is an N-channel MOSFET with a total of 5 pins. The pin configuration and their functions are as follows:
1. Gate (G): This pin controls the MOSFET's switching; applying a voltage here allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load; it is where the current flows out of the device when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply; it is where the current enters the MOSFET.
4. Body Diode (internal): Not a pin but an inherent feature of the MOSFET that allows current to flow in the reverse direction when the MOSFET is off.
The device is designed for power switching applications, with a rated voltage of 60V and a current capability of up to 70A, making it suitable for various automotive and industrial applications.
1. Gate (G): This pin controls the MOSFET's switching; applying a voltage here allows current to flow from drain to source.
2. Drain (D): This pin is connected to the load; it is where the current flows out of the device when it is turned on.
3. Source (S): This pin is connected to ground or the negative side of the power supply; it is where the current enters the MOSFET.
4. Body Diode (internal): Not a pin but an inherent feature of the MOSFET that allows current to flow in the reverse direction when the MOSFET is off.
The device is designed for power switching applications, with a rated voltage of 60V and a current capability of up to 70A, making it suitable for various automotive and industrial applications.
Manufacturer
The BUK7K17-60E is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in discrete, logic, and MOSFET components, focusing on providing high-quality and reliable semiconductor solutions for various applications, including automotive, industrial, and consumer electronics. The company was formed in 2017 as a spin-off from NXP Semiconductors, emphasizing efficiency and performance in its product portfolio. Nexperia is known for its strong commitment to quality and innovation in the semiconductor industry.
Application
The BUK7K17-60E is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include switch-mode power supplies (SMPS), motor control, LED drivers, and DC-DC converters. It is also suitable for high-frequency switching applications due to its fast switching capabilities and low on-resistance, making it ideal for use in automotive, industrial, and consumer electronic devices.
Equivalent
The BUK7K17-60E is a N-channel MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 75A. Equivalent products include the IRF3205, STP75NF60, and FQD12N60. Always verify specifications such as RDS(on), VGS ratings, and packaging before substitution to ensure compatibility in your application.
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