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BUK7Y12-40E
MOSFETs
- 제조업체
- Mfr.부분 #BUK7Y12-40E
- 패키지
- 데이터시트
- 재고 있음19471
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
BUK7Y12-40E is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a maximum drain-source voltage (Vds) of 40 volts and a continuous drain current (Id) rating of up to 100 amps, making it suitable for high-power applications.
This MOSFET is characterized by low on-resistance (Rds(on)), which minimizes power loss and heat generation during operation, enhancing efficiency in circuits. Typically used in switching applications, it is ideal for DC-DC converters, motor drivers, and other power management tasks.
The device is packaged in a robust TO-220 format, providing good thermal performance and ease of heat dissipation. Additionally, the BUK7Y12-40E features fast switching capabilities, making it effective for applications that require rapid on-off control.
Overall, the BUK7Y12-40E is a versatile component widely utilized in electronic designs that demand high efficiency and reliability in power handling.
This MOSFET is characterized by low on-resistance (Rds(on)), which minimizes power loss and heat generation during operation, enhancing efficiency in circuits. Typically used in switching applications, it is ideal for DC-DC converters, motor drivers, and other power management tasks.
The device is packaged in a robust TO-220 format, providing good thermal performance and ease of heat dissipation. Additionally, the BUK7Y12-40E features fast switching capabilities, making it effective for applications that require rapid on-off control.
Overall, the BUK7Y12-40E is a versatile component widely utilized in electronic designs that demand high efficiency and reliability in power handling.
Features
The BUK7Y12-40E is a high-performance N-channel MOSFET designed for power applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: The continuous drain current (I_D) is rated at 70A, making it suitable for high-current applications.
3. Low On-Resistance: It has a low R_DS(on) typically around 5.5 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Designed for high-speed switching, it minimizes losses in applications like DC-DC converters and motor drives.
5. Thermal Performance: The MOSFET has a thermal resistance (R_thJC) that ensures effective heat dissipation, contributing to reliability under high load conditions.
6. Package: It is commonly available in a TO-220 package, facilitating easy heat sinking and integration into power circuits.
Overall, the BUK7Y12-40E is ideal for use in power management, automotive applications, and industrial control systems.
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 40V.
2. Current Rating: The continuous drain current (I_D) is rated at 70A, making it suitable for high-current applications.
3. Low On-Resistance: It has a low R_DS(on) typically around 5.5 mΩ, which enhances efficiency by reducing power losses during operation.
4. Fast Switching Speed: Designed for high-speed switching, it minimizes losses in applications like DC-DC converters and motor drives.
5. Thermal Performance: The MOSFET has a thermal resistance (R_thJC) that ensures effective heat dissipation, contributing to reliability under high load conditions.
6. Package: It is commonly available in a TO-220 package, facilitating easy heat sinking and integration into power circuits.
Overall, the BUK7Y12-40E is ideal for use in power management, automotive applications, and industrial control systems.
Package
The BUK7Y12-40E is a N-channel MOSFET packaged in a TO-220 format. This package type provides efficient thermal performance and easier mounting for power electronic applications.
Pinout
The BUK7Y12-40E is a N-channel MOSFET designed for automotive and industrial applications. It features a pin count of 5. The main pins and their functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output pin where the load is connected; current flows from drain to source when the device is on.
3. Source (S): Connected to the ground or the negative side of the load; current flows out of this pin when the MOSFET is conducting.
4. Tab (Tab): Often used for heat dissipation; it may also be connected to the source in some packages.
This device is optimized for low on-resistance and high-speed switching, making it suitable for applications like motor control, power management, and LED drivers.
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output pin where the load is connected; current flows from drain to source when the device is on.
3. Source (S): Connected to the ground or the negative side of the load; current flows out of this pin when the MOSFET is conducting.
4. Tab (Tab): Often used for heat dissipation; it may also be connected to the source in some packages.
This device is optimized for low on-resistance and high-speed switching, making it suitable for applications like motor control, power management, and LED drivers.
Manufacturer
The BUK7Y12-40E is manufactured by Nexperia, a global semiconductor company that specializes in discrete, logic, and MOSFET components. Nexperia was formed in 2017 following the acquisition of NXP Semiconductors' Standard Products Division by a consortium led by Bain Capital.
Nexperia focuses on high-volume manufacturing of essential semiconductor products, providing solutions for various industries, including automotive, industrial, and consumer electronics. The company is known for its commitment to quality, reliability, and efficiency in semiconductor production, making it a key player in the electronics supply chain.
Nexperia focuses on high-volume manufacturing of essential semiconductor products, providing solutions for various industries, including automotive, industrial, and consumer electronics. The company is known for its commitment to quality, reliability, and efficiency in semiconductor production, making it a key player in the electronics supply chain.
Application
The BUK7Y12-40E is a high-speed N-channel MOSFET primarily used in applications such as power management, DC-DC converters, motor control, and load switching. Its features make it suitable for automotive systems, industrial automation, and renewable energy systems like solar inverters. Its low on-resistance and fast switching capabilities enhance efficiency in power electronics.
Equivalent
The BUK7Y12-40E is an N-channel MOSFET. Equivalent products include the STP7NK40Z, IRF740, and FQP7P06. Ensure to check specifications like voltage, current, and thermal characteristics for compatibility in your application.
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