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BUK7Y4R8-60E
- 제조업체
- Mfr.부분 #BUK7Y4R8-60E
- 패키지
- 데이터시트
- 재고 있음6873
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Brand | Nexperia |
개요
Description
BUK7Y4R8-60E appears to be a code or identifier, but without context, its meaning is unclear. It could represent a product model, a course code, a project identifier, or another specific item relevant to a particular field or organization. Introductions to such codes typically involve explaining their purpose, relevance, and any associated components or features. For instance, if BUK7Y4R8-60E is a new software version, an introduction might highlight its enhancements, compatibility, and use cases. If related to an academic course, it could outline the syllabus, objectives, and prerequisites. Understanding its context is crucial for a comprehensive introduction. If you provide more details or context, I can offer a more tailored introduction.
Features
The BUK7Y4R8-60E is a type of N-channel MOSFET transistor, typically used in various electronic applications for switching and amplification purposes. Here are some key features:
1. Voltage and Current Ratings: It usually supports a drain-source voltage (V_DS) of around 60V, making it suitable for medium power applications. The continuous drain current (I_D) is typically around 50A, allowing for high current conduction.
2. Low On-Resistance: It features low on-state resistance (R_DS(on)), which minimizes power losses and improves efficiency during operation.
3. Fast Switching Performance: The MOSFET is designed to operate at high speed, which is ideal for applications requiring quick switching.
4. Enhanced Thermal Management: It may come with a package that offers good thermal dissipation, enhancing reliability and stability under high power loads.
5. Robustness: Generally designed to handle high-power loads, it often includes protection features like ESD protection to ensure durability and longevity.
6. Applications: Commonly used in power management, motor control, DC/DC converters, and other power switching applications.
These features make the BUK7Y4R8-60E a versatile component for various electronic circuit designs.
1. Voltage and Current Ratings: It usually supports a drain-source voltage (V_DS) of around 60V, making it suitable for medium power applications. The continuous drain current (I_D) is typically around 50A, allowing for high current conduction.
2. Low On-Resistance: It features low on-state resistance (R_DS(on)), which minimizes power losses and improves efficiency during operation.
3. Fast Switching Performance: The MOSFET is designed to operate at high speed, which is ideal for applications requiring quick switching.
4. Enhanced Thermal Management: It may come with a package that offers good thermal dissipation, enhancing reliability and stability under high power loads.
5. Robustness: Generally designed to handle high-power loads, it often includes protection features like ESD protection to ensure durability and longevity.
6. Applications: Commonly used in power management, motor control, DC/DC converters, and other power switching applications.
These features make the BUK7Y4R8-60E a versatile component for various electronic circuit designs.
Package
The package type for the component with the code BUK7Y4R8-60E is typically TO-220. This is a standard package type used for power semiconductors, like MOSFETs, providing good heat dissipation capabilities due to its metal tab which can be mounted to a heatsink.
Pinout
The BUK7Y4R8-60E is a power MOSFET from Nexperia. It is housed in a DPAK (TO-252) package, which typically features three pins plus a tab. Here's a concise breakdown of the pin functions:
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Pin 2 (Drain): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Pin 3 (Source): This is where the current enters the MOSFET from the load.
4. Tab (Drain): The tab is electrically connected to the drain and is used to dissipate heat efficiently from the MOSFET to a heatsink or PCB.
The BUK7Y4R8-60E MOSFET is designed for use in applications requiring efficient power switching, with a focus on automotive and industrial applications. It features low on-state resistance and is suitable for high-speed switching environments.
1. Pin 1 (Gate): This pin is used to control the MOSFET. By applying a voltage to the gate, the MOSFET can be turned on or off.
2. Pin 2 (Drain): The drain is the terminal through which the main current flows when the MOSFET is in the 'on' state.
3. Pin 3 (Source): This is where the current enters the MOSFET from the load.
4. Tab (Drain): The tab is electrically connected to the drain and is used to dissipate heat efficiently from the MOSFET to a heatsink or PCB.
The BUK7Y4R8-60E MOSFET is designed for use in applications requiring efficient power switching, with a focus on automotive and industrial applications. It features low on-state resistance and is suitable for high-speed switching environments.
Manufacturer
The BUK7Y4R8-60E is manufactured by Nexperia. Nexperia is a semiconductor company known for producing discrete, logic, and MOSFET devices. It was spun off from NXP Semiconductors in 2017 and focuses on efficient and scalable production to serve the global electronics market. Nexperia's products are widely used in automotive, industrial, computing, consumer electronics, and communications applications.
Application
The BUK7Y4R8-60E is a N-channel MOSFET commonly used in various power management applications. Its primary application areas include DC-DC converters, motor drives, switching power supplies, and load switching in both consumer electronics and industrial equipment. The MOSFET's efficiency in handling high power and fast switching makes it suitable for these applications, ensuring reliability and performance.
Equivalent
The BUK7Y4R8-60E is a MOSFET transistor produced by Nexperia. Equivalent products from other manufacturers might include:
1. IRFZ44N by International Rectifier/Infineon
2. FQP30N06L by ON Semiconductor
3. STP60NF06 by STMicroelectronics
These equivalents may vary slightly in specifications such as voltage, current ratings, and package types, so always verify the datasheets to ensure compatibility with your specific application.
1. IRFZ44N by International Rectifier/Infineon
2. FQP30N06L by ON Semiconductor
3. STP60NF06 by STMicroelectronics
These equivalents may vary slightly in specifications such as voltage, current ratings, and package types, so always verify the datasheets to ensure compatibility with your specific application.
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