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BUK9K25-40E
MOSFETs
- 제조업체
- Mfr.부분 #BUK9K25-40E
- 패키지
- 데이터시트
- 재고 있음27131
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배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
The BUK9K25-40E is a high-performance N-channel MOSFET designed for power management applications. It features a low on-resistance, enabling efficient switching and reduced power loss, making it suitable for use in power supplies, motor drivers, and other high-current applications. With a maximum drain-source voltage (V_DS) of 25V and a continuous drain current (I_D) of up to 40A, it provides robust performance in demanding environments.
The device's fast switching capabilities enhance its efficiency, while its thermal management characteristics allow for reliable operation at elevated temperatures. The BUK9K25-40E is housed in a TO-220 package, which facilitates effective heat dissipation. Its compact design and high reliability make it a popular choice for designers looking to improve the performance of their power electronic circuits.
Overall, the BUK9K25-40E stands out for its balance of performance, efficiency, and thermal management, making it a valuable component in modern electronic applications.
The device's fast switching capabilities enhance its efficiency, while its thermal management characteristics allow for reliable operation at elevated temperatures. The BUK9K25-40E is housed in a TO-220 package, which facilitates effective heat dissipation. Its compact design and high reliability make it a popular choice for designers looking to improve the performance of their power electronic circuits.
Overall, the BUK9K25-40E stands out for its balance of performance, efficiency, and thermal management, making it a valuable component in modern electronic applications.
Features
The BUK9K25-40E is a high-performance N-channel MOSFET designed for applications requiring efficient power management. Key features include:
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain currents up to 9A, suitable for medium-power applications.
3. Low On-Resistance: The device boasts a low R_DS(on), which minimizes conduction losses, improving efficiency in power conversion.
4. Fast Switching Speed: Designed for quick switching, it enhances the performance in high-frequency applications.
5. Thermal Performance: It features a TO-220 package that allows for effective heat dissipation, ensuring reliability under load.
6. Gate Threshold Voltage: The threshold voltage is optimized for proper operation in typical gate drive voltage ranges.
These features make the BUK9K25-40E ideal for use in power supplies, motor control, and other switching applications.
1. Voltage Rating: It typically supports a maximum drain-source voltage (V_DS) of 40V, making it suitable for various applications.
2. Current Rating: It can handle continuous drain currents up to 9A, suitable for medium-power applications.
3. Low On-Resistance: The device boasts a low R_DS(on), which minimizes conduction losses, improving efficiency in power conversion.
4. Fast Switching Speed: Designed for quick switching, it enhances the performance in high-frequency applications.
5. Thermal Performance: It features a TO-220 package that allows for effective heat dissipation, ensuring reliability under load.
6. Gate Threshold Voltage: The threshold voltage is optimized for proper operation in typical gate drive voltage ranges.
These features make the BUK9K25-40E ideal for use in power supplies, motor control, and other switching applications.
Package
The BUK9K25-40E is packaged in a TO-220 form factor. This package type features a metal tab for heat dissipation, making it suitable for high-power applications.
Pinout
The BUK9K25-40E is an N-channel MOSFET with a total of 4 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): This pin connects to the load; it carries the current when the device is in the on state.
3. Source (S): This pin is connected to ground or the negative side of the power supply and serves as the return path for the current.
4. Body diode (inherent): Although not a pin, the BUK9K25-40E has an internal body diode that allows current to flow from the source to the drain when the MOSFET is off.
The BUK9K25-40E is designed for high-efficiency switching applications, offering low on-resistance and high-speed operation, making it suitable for power management in various electronic circuits.
1. Gate (G): This pin is used to control the MOSFET; applying a voltage here turns the device on or off.
2. Drain (D): This pin connects to the load; it carries the current when the device is in the on state.
3. Source (S): This pin is connected to ground or the negative side of the power supply and serves as the return path for the current.
4. Body diode (inherent): Although not a pin, the BUK9K25-40E has an internal body diode that allows current to flow from the source to the drain when the MOSFET is off.
The BUK9K25-40E is designed for high-efficiency switching applications, offering low on-resistance and high-speed operation, making it suitable for power management in various electronic circuits.
Manufacturer
The BUK9K25-40E is manufactured by the Russian company Almaz-Antey. Almaz-Antey is a major defense corporation specializing in the development and production of advanced air defense systems, missile systems, and other military hardware. Established in 2002, the company plays a significant role in Russia's defense industry, focusing on the creation of high-tech solutions to enhance national security. Their products are widely used in various military applications, and the company is known for its expertise in integrated air and missile defense systems. Almaz-Antey operates both in the domestic market and engages in international defense contracts, contributing to its status as a key player in global defense technology.
Application
The BUK9K25-40E is a high-voltage N-channel MOSFET primarily used in power management applications, including switch-mode power supplies (SMPS), DC-DC converters, electric vehicles, and renewable energy systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency designs and thermal management in industrial and automotive applications.
Equivalent
The BUK9K25-40E chip is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQD30N30. Always check the specific datasheet for parameters like voltage, current ratings, and RDS(on) to ensure compatibility for your application.
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