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BUK9K52-60E
MOSFETs
- 제조업체
- Mfr.부분 #BUK9K52-60E
- 패키지
- 데이터시트
- 재고 있음15202
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
개요
Description
BUK9K52-60E is a high-performance N-channel MOSFET designed for applications requiring efficient switching and low power loss. With a maximum drain-source voltage (Vds) of 600V and a continuous drain current (Id) of 52A, this device is suitable for high-voltage power supply circuits, motor drives, and other switching applications.
The MOSFET features a low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance. Its robust design ensures reliability in demanding environments, making it ideal for industrial and automotive applications. The BUK9K52-60E also offers fast switching capabilities, contributing to improved efficiency in power management.
Key specifications include a gate threshold voltage (Vgs(th)) that allows for easy drive with standard logic levels. Overall, the BUK9K52-60E is a versatile component optimized for high-efficiency designs in various electronic systems.
The MOSFET features a low on-resistance (Rds(on)), which minimizes conduction losses and enhances thermal performance. Its robust design ensures reliability in demanding environments, making it ideal for industrial and automotive applications. The BUK9K52-60E also offers fast switching capabilities, contributing to improved efficiency in power management.
Key specifications include a gate threshold voltage (Vgs(th)) that allows for easy drive with standard logic levels. Overall, the BUK9K52-60E is a versatile component optimized for high-efficiency designs in various electronic systems.
Features
The BUK9K52-60E is an N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage of 60V, making it suitable for various power management applications.
2. Current Handling: It can handle continuous drain currents up to 9A, which supports high-load circuits.
3. Low RDS(on): This MOSFET boasts a low on-resistance (typically around 10 mΩ), which minimizes power losses and heat generation during operation.
4. Fast Switching: It offers fast switching capabilities, making it ideal for applications like DC-DC converters, power supplies, and motor drives.
5. Thermal Performance: It comes in a TO-220 package that facilitates effective heat dissipation, enhancing reliability in thermal management.
6. Gate Threshold Voltage: The gate threshold voltage is low, allowing for easier drive with standard logic levels.
Overall, the BUK9K52-60E is suitable for various consumer, industrial, and automotive applications where efficient power management is crucial.
1. Voltage Rating: It has a maximum drain-source voltage of 60V, making it suitable for various power management applications.
2. Current Handling: It can handle continuous drain currents up to 9A, which supports high-load circuits.
3. Low RDS(on): This MOSFET boasts a low on-resistance (typically around 10 mΩ), which minimizes power losses and heat generation during operation.
4. Fast Switching: It offers fast switching capabilities, making it ideal for applications like DC-DC converters, power supplies, and motor drives.
5. Thermal Performance: It comes in a TO-220 package that facilitates effective heat dissipation, enhancing reliability in thermal management.
6. Gate Threshold Voltage: The gate threshold voltage is low, allowing for easier drive with standard logic levels.
Overall, the BUK9K52-60E is suitable for various consumer, industrial, and automotive applications where efficient power management is crucial.
Package
The BUK9K52-60E is packaged in a TO-220 form factor. This package type is designed for high-power applications, providing efficient thermal management and easy mounting on heat sinks.
Pinout
The BUK9K52-60E is an N-channel MOSFET from NXP Semiconductors, commonly used in power switching applications. It comes in a TO-220 package, which typically has three pins.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This is the output pin where the load is connected. It carries the current when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It completes the circuit.
These pins allow the BUK9K52-60E to effectively control high power loads in various applications such as motor drives, power supplies, and other switching applications. The device is designed for high efficiency and fast switching capabilities.
Pin Count and Functions:
1. Gate (G) - This pin is used to control the MOSFET. A voltage applied here turns the device on or off.
2. Drain (D) - This is the output pin where the load is connected. It carries the current when the MOSFET is in the on state.
3. Source (S) - This pin is connected to the ground or the negative side of the power supply. It completes the circuit.
These pins allow the BUK9K52-60E to effectively control high power loads in various applications such as motor drives, power supplies, and other switching applications. The device is designed for high efficiency and fast switching capabilities.
Manufacturer
The BUK9K52-60E is a product manufactured by Nexperia, a global semiconductor company. Nexperia specializes in providing a wide range of discrete, logic, and MOSFET components for various electronic applications. The company focuses on high-volume production, delivering reliable and high-performance semiconductor solutions. Nexperia originated as part of Philips, and it has since established itself as an independent entity, emphasizing efficiency and innovation in semiconductor manufacturing. The BUK9K52-60E itself is a N-channel MOSFET, commonly used in power management applications due to its efficiency and effectiveness in switching and amplification tasks.
Application
BUK9K52-60E is a N-channel MOSFET primarily used in power management applications. Its applications include motor control, power supplies, automotive systems, and lighting controls. It is suitable for high-efficiency switching, DC-DC converters, and inverter circuits, as it can handle high currents and voltages effectively, making it ideal for industrial and consumer electronics.
Equivalent
The BUK9K52-60E is an N-channel MOSFET. Equivalent products include the IRF3205, FQP50N60, and STP55NF06. Ensure to verify specifications like voltage, current ratings, and package type before substitution for compatibility in applications.
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