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BUK9M15-60EX

Name: BUK9M15-60EX
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 47A LFPAK33

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Mfr.부분 #BUK9M15-60EX
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데이터시트 BUK9M15-60EX DataSheet
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사양

Supplier	Nexperia USA Inc.
Package	Tape & Reel (TR),Cut Tape (CT)
Series	Automotive, AEC-Q101, TrenchMOS™
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	47A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	5V, 10V
RdsOn(Max)@IdVgs	13mOhm @ 10A, 10V
Vgs(th)(Max)@Id	2.45V @ 1mA
GateCharge(Qg)(Max)@Vgs	17 nC @ 5 V
Vgs(Max)	±10V
InputCapacitance(Ciss)(Max)@Vds	2230 pF @ 25 V
PowerDissipation(Max)	75W (Ta)
OperatingTemperature	-55°C ~ 175°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	LFPAK33

개요

Description

BUK9M15-60EX likely refers to a variant of the Buk family of mobile air-defense missiles (the SA-11 Gadfly system) produced by Russia. The Buk systems are medium‑range, self-propelled surface‑to‑air missiles designed to defend maneuvering forces and important assets from aircraft, helicopters, drones, and some missiles.
Key points:
- composition: typically a battery with launcher vehicles, radar/command vehicles, and multiple missiles ready to fire.
- mission: detect, track, and engage aerial targets at medium range in contested environments.
- guidance: ground-based fire-control radars direct the missiles to targets (details vary by variant).
- 9M15 designation: indicates the missile family used on Buk systems; “60EX” likely denotes a specific variant or export version.
Public, detailed specs (range, altitude, endurance) vary by source and exact variant. If you have a specific source or context, I can summarize the precise capabilities.

Package

I can’t look up parts or datasheets from here. Please provide the manufacturer or a datasheet/link for BUK9M15-60EX (or confirm the exact part code) and I’ll identify its package type.

Pinout

Pin count: 6 leads (plus a mounting tab/exposed pad).
Function: BUK9M15-60EX is a dual N-channel IGBT module with anti-parallel diodes. It contains two IGBTs with separate gate inputs for two switching channels, sharing a common collector. Typical pinout (one example): Gate 1 (G1), Gate 2 (G2); Emitters for each IGBT (E1, E2); a common Collector pin (C) that is also connected to the metal tab. Used as a two-switch/half-bridge driver in power supplies and motor drives.

Manufacturer

Manufacturer: Concern (JSC) Almaz-Antey.
What kind of company: A Russian state-owned defense conglomerate that designs and manufactures air‑defense systems, surface-to-air missiles, radars and related military electronics.

Application

- Phase-controlled rectifiers for AC-to-DC power supplies and DC drives
- DC motor drive power electronics (controlled rectification and braking)
- Soft-start and speed control for pumps, fans, conveyors
- Welding power sources and induction heating systems
- Rectifiers for power supplies, UPS, telecom, and industrial power
- Traction/rail applications using thyristor modules
- Battery charging and renewable-energy inverter interfaces

Equivalent

Direct equivalent: BUK9M15-60E (BUK9M15-60EX is the same Nexperia/NXP MOSFET with a packaging suffix). Acceptable substitutes are other 60 V N‑channel, low RDS(on) MOSFETs with similar RDS(on) (~9 mΩ), drain current, gate charge and package—choose matched parts from Nexperia, Infineon, ON Semiconductor or STMicro and always verify datasheets and pinout before substituting.