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BUK9M85-60EX
MOSFET N-CH 60V 12.8A LFPAK33
- 제조업체
- Mfr.부분 #BUK9M85-60EX
- 패키지
- 데이터시트 BUK9M85-60EX DataSheet
- 재고 있음7569
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사양
| Series | TrenchMOS™ |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 73mOhm @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2.1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 4.4 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 434 pF @ 25 V |
| Power Dissipation (Max) | 31W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | LFPAK33 |
| Package / Case | SOT-1210, 8-LFPAK33 (5-Lead) |
| Base Product Number | BUK9M85 |
개요
Description
With a voltage rating of 60V and a current capacity of typically around 85A, the BUK9M85-60EX is optimized for performance in medium to high power applications. It features a low gate charge and a rugged design that ensures reliable operation under challenging conditions. The MOSFET is encapsulated in standard surface-mount packages, which facilitates easy integration into compact circuit designs.
The device also offers excellent thermal performance, which is crucial for maintaining efficiency and reliability in power electronics. Overall, the BUK9M85-60EX provides a robust solution for engineers looking to design efficient and compact high-power systems.
Features
1. Voltage and Current Ratings: It typically supports a maximum drain-source voltage (V_DS) of around 60V and a continuous drain current (I_D) of up to 75A, which allows it to handle significant power loads.
2. Low On-Resistance: This device offers low R_DS(on) values, reducing power losses and improving energy efficiency during operation, which is critical for applications requiring high efficiency.
3. Thermal Performance: The MOSFET is designed to manage heat effectively, often being paired with appropriate heat sinks or PCB designs to optimize thermal performance.
4. Fast Switching: With rapid switching capabilities, the BUK9M85-60EX is suitable for high-frequency applications, contributing to compact and efficient circuit designs.
5. Robust Design: It includes features that provide protection against over-voltage and over-current conditions, enhancing reliability in demanding environments.
These features make the BUK9M85-60EX suitable for use in consumer electronics, automotive systems, and industrial equipment where efficient power regulation and management are essential.
Package
Pinout
1. Drain: The primary terminal for the high current load.
2. Gate: The terminal that controls the MOSFET switching.
3. Source: The terminal connected to the ground or return path of the circuit.
In the BUK9M85-60EX, multiple pins may be internally connected to the same terminal to handle higher currents. The exact pin configuration can be confirmed by referring to the device's datasheet. This MOSFET is commonly used in various applications such as DC-DC converters, power management systems, and motor control circuits due to its efficient switching capability and low on-resistance.
Manufacturer
Application
Equivalent
1. IRF540N from Infineon Technologies
2. FDMS86200 from ON Semiconductor
3. STP75NF75 from STMicroelectronics
Verify datasheets to ensure compatibility in terms of voltage, current ratings, and package type, as these may vary slightly.
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
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