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BUK9Y25-60E
MOSFETs
- 제조업체
- Mfr.부분 #BUK9Y25-60E
- 패키지
- 데이터시트
- 재고 있음26962
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
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사양
개요
Description
BUK9Y25-60E is a high-performance N-channel MOSFET designed for various applications, including power management and switching. It features a low on-resistance, enabling efficient conduction and reduced power loss, which is crucial for high-efficiency designs. The device typically has a maximum drain-source voltage (V_DS) of 60V and can handle continuous drain currents up to 9A, making it suitable for medium to high power applications.
The BUK9Y25-60E is characterized by its fast switching capabilities, allowing for effective use in pulse-width modulation (PWM) and other dynamic applications. It is commonly used in power supplies, motor control circuits, and automotive applications. The device is packaged in a TO-220 or similar format, facilitating effective thermal management.
Overall, the BUK9Y25-60E is a versatile component that plays a critical role in improving the efficiency and performance of electronic circuits.
The BUK9Y25-60E is characterized by its fast switching capabilities, allowing for effective use in pulse-width modulation (PWM) and other dynamic applications. It is commonly used in power supplies, motor control circuits, and automotive applications. The device is packaged in a TO-220 or similar format, facilitating effective thermal management.
Overall, the BUK9Y25-60E is a versatile component that plays a critical role in improving the efficiency and performance of electronic circuits.
Features
The BUK9Y25-60E is a high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 60V, making it suitable for applications requiring robust voltage handling.
2. Current Rating: It can support continuous drain current (Id) around 9A, depending on the thermal conditions.
3. Low Rds(on): The device usually exhibits a low on-resistance, enhancing efficiency by minimizing power loss during operation.
4. Fast Switching Speed: The BUK9Y25-60E is capable of fast switching, making it ideal for high-frequency applications.
5. Thermal Performance: It often comes in a TO-220 or similar package, allowing for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drivers, and power supplies.
These features make the BUK9Y25-60E suitable for various electronics and power management solutions.
1. Voltage Rating: It typically has a maximum drain-source voltage (Vds) of 60V, making it suitable for applications requiring robust voltage handling.
2. Current Rating: It can support continuous drain current (Id) around 9A, depending on the thermal conditions.
3. Low Rds(on): The device usually exhibits a low on-resistance, enhancing efficiency by minimizing power loss during operation.
4. Fast Switching Speed: The BUK9Y25-60E is capable of fast switching, making it ideal for high-frequency applications.
5. Thermal Performance: It often comes in a TO-220 or similar package, allowing for effective heat dissipation.
6. Applications: Commonly used in DC-DC converters, motor drivers, and power supplies.
These features make the BUK9Y25-60E suitable for various electronics and power management solutions.
Package
The BUK9Y25-60E is packaged in a TO-220 housing type. This package is commonly used for power transistors and provides a good balance of thermal performance and compact size, suitable for various applications in power electronics.
Pinout
The BUK9Y25-60E is a N-channel MOSFET designed for high-performance applications. It typically comes in a DPAK (TO-252) package, which features a pin count of 3. The functions of the pins are as follows:
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate enables or disables the current flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the reference point in the circuit. When the MOSFET is on, current flows from the drain to the source.
The BUK9Y25-60E is rated for a maximum continuous drain current of 25A and has a maximum drain-source voltage of 60V, making it suitable for various power management applications.
1. Gate (G): This pin controls the MOSFET operation. A voltage applied to the gate enables or disables the current flow between the drain and source.
2. Drain (D): This is the pin through which the main current flows when the MOSFET is turned on. It connects to the load.
3. Source (S): This pin is connected to the ground or the reference point in the circuit. When the MOSFET is on, current flows from the drain to the source.
The BUK9Y25-60E is rated for a maximum continuous drain current of 25A and has a maximum drain-source voltage of 60V, making it suitable for various power management applications.
Manufacturer
The BUK9Y25-60E is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, providing essential building blocks for various electronic applications. The company focuses on high-performance and high-reliability devices, catering to industries such as automotive, industrial, consumer electronics, and communication. Nexperia was formed in 2017 when it was spun off from NXP Semiconductors and has since established itself as a key player in the semiconductor market, emphasizing efficiency, quality, and sustainability in its products and processes.
Application
The BUK9Y25-60E is a high-voltage N-channel MOSFET primarily used in power electronics applications. Its application areas include switch-mode power supplies, motor control circuits, DC-DC converters, and inverters in renewable energy systems. It is suitable for automotive, industrial, and consumer electronics due to its high efficiency and fast switching capabilities.
Equivalent
Equivalent products to the BUK9Y25-60E MOSFET include the STP9NK25Z, IRF840, and FQP30N25. These alternatives have similar voltage and current ratings, but always verify specifications like RDS(on) and gate threshold voltage for compatibility in your specific application.
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