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BUK9Y53-100B
- 제조업체
- Mfr.부분 #BUK9Y53-100B
- 패키지
- 데이터시트
- 재고 있음8172
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Technology | Si |
| Brand | Nexperia |
| Product Type | MOSFETs |
| Subcategory | Transistors |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-669-5 |
개요
Description
BUK9Y53-100B is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power applications. It features a low on-resistance (RDS(on)), which enables efficient power management and reduced heat generation, making it suitable for use in power supplies, motor drives, and DC-DC converters. Additionally, its high voltage and current ratings make it ideal for demanding applications that require robust performance. The device typically has fast switching capabilities, allowing it to operate efficiently in high-frequency applications.
BUK9Y53-100B is packaged in a surface-mount format, facilitating easier integration into modern electronic designs. Its thermal characteristics ensure reliable operation under varying conditions. When using this MOSFET, it's essential to consider its gate threshold voltage and maximum gate-to-source voltage to ensure proper operation within specified limits. Overall, BUK9Y53-100B is a versatile component that meets the needs of contemporary electronic circuits requiring efficient power management solutions.
BUK9Y53-100B is packaged in a surface-mount format, facilitating easier integration into modern electronic designs. Its thermal characteristics ensure reliable operation under varying conditions. When using this MOSFET, it's essential to consider its gate threshold voltage and maximum gate-to-source voltage to ensure proper operation within specified limits. Overall, BUK9Y53-100B is a versatile component that meets the needs of contemporary electronic circuits requiring efficient power management solutions.
Features
The BUK9Y53-100B is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Max Drain-Source Voltage (V_DS): 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current (I_D): Up to 53A, allowing for robust power handling.
3. Low On-Resistance (R_DS(on)): Approximately 10.5 mΩ at V_GS = 10V, which reduces conduction losses and improves efficiency.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications.
5. Thermal Resistance: Offers good thermal performance, helping to manage heat dissipation effectively.
6. TO-220 Package: Facilitates easy mounting and heat sinking for improved thermal management.
7. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, ensuring compatibility with various gate drive circuits.
These features make the BUK9Y53-100B suitable for use in applications like DC-DC converters, motor drives, and power inverters, where efficiency and reliability are crucial.
1. Max Drain-Source Voltage (V_DS): 100V, making it suitable for high-voltage applications.
2. Continuous Drain Current (I_D): Up to 53A, allowing for robust power handling.
3. Low On-Resistance (R_DS(on)): Approximately 10.5 mΩ at V_GS = 10V, which reduces conduction losses and improves efficiency.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications.
5. Thermal Resistance: Offers good thermal performance, helping to manage heat dissipation effectively.
6. TO-220 Package: Facilitates easy mounting and heat sinking for improved thermal management.
7. Gate Threshold Voltage (V_GS(th)): Typically between 2V to 4V, ensuring compatibility with various gate drive circuits.
These features make the BUK9Y53-100B suitable for use in applications like DC-DC converters, motor drives, and power inverters, where efficiency and reliability are crucial.
Package
The BUK9Y53-100B is packaged in a TO-220 form factor, which is a popular package type for power transistors and MOSFETs, allowing for efficient heat dissipation and easy mounting on heatsinks.
Pinout
The BUK9Y53-100B is a N-channel MOSFET packaged in a DPAK (TO-252) configuration. It features a total of three pins. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to this pin allows current to flow from drain to source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or negative side of the circuit; it completes the current path when the device is activated.
The BUK9Y53-100B is designed for high-efficiency power management applications, including switching power supplies, motor control, and LED drivers. It has a low on-resistance, making it suitable for applications requiring high current handling with minimal power loss.
1. Gate (G): This pin is used to control the MOSFET; applying a voltage to this pin allows current to flow from drain to source.
2. Drain (D): This is the pin through which the load current flows when the MOSFET is in the "on" state.
3. Source (S): This pin is connected to the ground or negative side of the circuit; it completes the current path when the device is activated.
The BUK9Y53-100B is designed for high-efficiency power management applications, including switching power supplies, motor control, and LED drivers. It has a low on-resistance, making it suitable for applications requiring high current handling with minimal power loss.
Manufacturer
The BUK9Y53-100B is manufactured by Nexperia, a semiconductor company that specializes in discrete, logic, and MOSFET devices. Nexperia was formed as a spin-off from NXP Semiconductors in 2017 and has since focused on providing high-quality and reliable electronic components for various applications, including automotive, industrial, and consumer electronics. The company is known for its expertise in producing discrete components such as transistors, diodes, and integrated circuits, which are essential for modern electronic designs. Nexperia operates globally, with a strong emphasis on innovation and efficiency in semiconductor manufacturing.
Application
The BUK9Y53-100B is a high-voltage N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, lighting systems, and power supplies. Its high efficiency and fast switching capabilities make it suitable for various applications in renewable energy systems, electric vehicles, and industrial automation.
Equivalent
The BUK9Y53-100B is a N-channel MOSFET. Equivalent products include the IRF3205, STP75NF75, and FQP75N06. Ensure to compare specifications such as voltage rating, current handling, and RDS(on) for compatibility in your application.
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