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C3M0030090K
SICFET N-CH 900V 73A TO247-4
- 제조업체
- Mfr.부분 #C3M0030090K
- 패키지
- 데이터시트
- 재고 있음6353
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Series | C3M™ |
| Part Status | Obsolete |
| Base Product Number | C3M0030090 |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 900 V |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 35A, 15V |
| Vgs(th) (Max) @ Id | 3.5V @ 11mA |
| Gate Charge (Qg) (Max) @ Vgs | 74 nC @ 15 V |
| Vgs (Max) | +15V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 1503 pF @ 600 V |
| Power Dissipation (Max) | 240W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package | TO-247-4 |
| Packaging | Tube |
개요
Description
Features
1. Measurement Range: It offers a wide current sensing range, enabling accurate detection of small to large current values.
2. Isolation: Provides electrical isolation, enhancing safety in high-voltage applications.
3. Sensitivity: High sensitivity ensures precise readings, making it suitable for low-current applications.
4. Compact Design: Its small footprint allows for space-saving in PCB layouts.
5. Temperature Stability: Designed to maintain performance across a wide temperature range, ensuring reliability in diverse environments.
6. Low Power Consumption: Efficient in power usage, making it ideal for battery-powered devices.
7. Easy Integration: Compatible with standard microcontrollers and signal processing systems, facilitating straightforward implementation.
Overall, the C3M0030090K is ideal for applications requiring precise current measurement in compact and efficient designs.
Package
Pinout
1. Gate (G) - Pin for controlling the MOSFET's on/off state.
2. Drain (D) - Pin for connecting to the load or supply voltage.
3. Source (S) - Pin for connecting to the ground or reference voltage.
4. Body Diode (D) - Integrated body diode for current flow in reverse direction.
The device is designed for high efficiency and high-temperature applications, often used in power electronics, including converters and inverters. Its SiC technology allows for higher voltage, faster switching, and better thermal performance compared to traditional silicon MOSFETs.
Manufacturer
Application
Equivalent
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지불
Payment Methods
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