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C3M0065090D

Name: C3M0065090D
Rating: 4.7 (12 reviews)

SICFET N-CH 900V 36A TO247-3

제조업체
Mfr.부분 #C3M0065090D
패키지
데이터시트 C3M0065090D DataSheet
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+BOM은 RFQ는

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RFQ 및더 많은 할인

사양

Supplier	Wolfspeed, Inc.
Package	Tube
Series	C3M™
ProductStatus	Active
FETType	N-Channel
Technology	SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)	900 V
Current-ContinuousDrain(Id)@25°C	36A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	15V
RdsOn(Max)@IdVgs	78mOhm @ 20A, 15V
Vgs(th)(Max)@Id	2.1V @ 5mA
GateCharge(Qg)(Max)@Vgs	30.4 nC @ 15 V
Vgs(Max)	+18V, -8V
InputCapacitance(Ciss)(Max)@Vds	660 pF @ 600 V
PowerDissipation(Max)	125W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Through Hole
SupplierDevicePackage	TO-247-3

개요

Description

C3M0065090D is a part number often associated with a specific component or product, potentially in the fields of electronics or manufacturing. To provide a more accurate introduction, additional context such as the manufacturer, application, or industry would be essential.
Typically, such part numbers indicate details related to specifications, compatibility, and functionality. They are used for inventory management, ordering, and identification of parts in technical documents. If you are looking for specific information about C3M0065090D, please provide more details regarding its context or usage.

Features

The C3M0065090D is a high-performance GaN (Gallium Nitride) power amplifier designed for various RF applications. Key features include:
1. Frequency Range: Operates typically from 1.5 to 3.5 GHz, making it suitable for a wide range of communication systems.
2. Output Power: Provides high output power, enabling efficient signal transmission and improved range.
3. High Efficiency: Exhibits excellent power efficiency, which reduces heat generation and improves overall system performance.
4. Compact Size: Features a small footprint, facilitating easy integration into compact designs.
5. Robustness: Offers high reliability and durability, suitable for demanding environments.
6. Linearity: Maintains good linearity, important for preserving signal quality in communication applications.
These attributes make the C3M0065090D ideal for use in telecommunications, military, and aerospace applications where performance and reliability are critical.

Package

The C3M0065090D is a silicon carbide (SiC) MOSFET packaged in a TO-247 format. This package type is designed for high power applications, offering robust thermal performance and efficient heat dissipation.

Pinout

The C3M0065090D is a silicon carbide (SiC) MOSFET manufactured by Cree (now Wolfspeed). It has a total of 4 pins. The pin configuration and their functions are as follows:
1. Gate (G) - This pin is used to control the MOSFET’s on/off state by applying a voltage.
2. Drain (D) - This is the output pin where the load connects, allowing current to flow through the device when it is turned on.
3. Source (S) - This pin is connected to the ground or the negative side of the load, completing the circuit when the device is on.
4. Thermal Pad (TP) - While not a pin, this pad is important for thermal management and should be connected to a heat sink or PCB for effective heat dissipation.
The C3M0065090D is suitable for high-efficiency power applications due to its low switching losses and high thermal conductivity.

Manufacturer

The C3M0065090D is manufactured by STMicroelectronics, a global semiconductor company. STMicroelectronics is known for designing and manufacturing a wide range of semiconductor products, including microcontrollers, sensors, and power management devices. The company serves various markets such as automotive, industrial, consumer electronics, and communications. With a strong focus on innovation and sustainability, STMicroelectronics plays a significant role in advancing technology through its extensive portfolio of integrated circuits and solutions that enable smarter and more efficient electronic systems.

Application

C3M0065090D is a silicon carbide (SiC) MOSFET primarily used in power electronics applications. Its key areas include electric vehicles (EVs), renewable energy systems (like solar inverters), industrial motor drives, and high-efficiency power supplies. Due to its high thermal conductivity and efficiency, it is ideal for applications requiring high voltage and temperature resistance.

Equivalent

The C3M0065090D chip is a SiC MOSFET. Equivalent products include the Cree (Wolfspeed) C3M0065090K, ROHM RSC-100T, and ON Semiconductor NTP8105N. Always verify specifications such as voltage, current ratings, and thermal characteristics for compatibility.