이미지는 참조용만

CL32B106KBJNNNE

Name: CL32B106KBJNNNE
Rating: 4.7 (12 reviews)

CAP CER 10UF 50V X7R 1210

제조업체
Mfr.부분 #CL32B106KBJNNNE
패키지
데이터시트 CL32B106KBJNNNE DataSheet
재고 있음5347

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Series	CL
Part Status	Active
Capacitance	10 µF
Tolerance	±10%
Voltage - Rated	50V
Temperature Coefficient	X7R
Operating Temperature	-55°C ~ 125°C
Applications	General Purpose
Mounting Type	Surface Mount, MLCC
Package / Case	1210 (3225 Metric)
Size / Dimension	0.126" L x 0.098" W (3.20mm x 2.50mm)
Thickness (Max)	0.106" (2.70mm)

개요

Description

The CL32B106KBJNNNE is a part number for a specific type of DRAM memory chip manufactured by Samsung. It typically refers to a 1GB, 2Rx8 DDR3 SDRAM component, operating at a voltage of 1.5V and supporting data rates of up to 1600 MT/s (megatransfers per second). The chip is commonly used in various applications, including laptops, desktops, and other electronic devices that require volatile memory.
The "32" in the part number indicates the organization of the memory chip, while "106" refers to the memory density. The "KB" signifies that the chip is a DRAM module, and "JNNNE" typically denotes specific manufacturing characteristics, such as temperature range and packaging type. Overall, the CL32B106KBJNNNE is designed to deliver reliable performance in memory-intensive applications.

Features

The CL32B106KBJNNNE is a DDR4 SDRAM memory module produced by Samsung, specifically designed for use in computing devices. Key features include:
1. Capacity: 8GB.
2. Type: DDR4 SDRAM.
3. Speed: 2400 MT/s (megatransfers per second), which provides efficient data transfer rates.
4. Form Factor: DIMM (Dual Inline Memory Module), suitable for desktop computers.
5. Voltage: Operates at a standard voltage of 1.2V, enhancing power efficiency.
6. Latency: CL (CAS Latency) of 16, allowing for quicker data access.
7. Compatibility: Supports various platforms due to the DDR4 standard.
8. ECC Support: Enhanced reliability with optional Error-Correcting Code (ECC) support, depending on the specific configuration.

This module is suitable for tasks requiring moderate to high memory performance, making it ideal for gaming, content creation, and general computing tasks.

Package

The CL32B106KBJNNNE is a DDR3 SDRAM memory module packaged in a 204-pin SODIMM format, commonly used in laptops and small form-factor devices.

Pinout

The CL32B106KBJNNNE is a DRAM module produced by Samsung, specifically a 1GB DDR3 SDRAM SO-DIMM (Small Outline Dual In-line Memory Module). It features a pin count of 204 pins.
The key functions of this memory module include providing temporary data storage for improving the performance of computers and laptops, especially in multitasking and memory-intensive applications. DDR3 technology offers higher bandwidth and lower power consumption compared to its predecessors.
This module operates at a voltage of 1.5V and supports dual-channel architecture, enhancing data transfer rates and overall system performance. Its compact SO-DIMM form factor makes it suitable for use in laptops and compact systems.

Manufacturer

The manufacturer of the CL32B106KBJNNNE is Samsung Electronics. Samsung is a South Korean multinational conglomerate that is one of the largest manufacturers of electronic components, including semiconductors, displays, and memory chips. The company is part of the larger Samsung Group, which operates in various sectors such as consumer electronics, telecommunications, and home appliances. Samsung Electronics is particularly known for its innovation in technology and its significant role in the global market for memory products, such as DRAM and NAND flash memory.

Application

The CL32B106KBJNNNE is a 1GB DDR3 SDRAM memory chip commonly used in various applications including consumer electronics, desktop and laptop computers, servers, networking devices, and embedded systems. It supports high-speed data processing and is suitable for tasks requiring efficient memory performance in gaming, multimedia, and general computing environments.

Equivalent

The CL32B106KBJNNNE is a Samsung DDR3 SDRAM SO-DIMM module. Equivalent products include:
1. Crucial CT8G3S1067M - 8GB DDR3-1066 SO-DIMM
2. Kingston KVR1066D3S7/8G - 8GB DDR3-1066 SO-DIMM
3. Corsair CMSO8GX3M1A1066C7 - 8GB DDR3-1066 SO-DIMM
Ensure compatibility with your device before replacement.