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CSD13381F4T
MOSFET N-CH 12V 2.1A 3PICOSTAR
- 제조업체
- Mfr.부분 #CSD13381F4T
- 패키지
- 데이터시트
- 재고 있음4525
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배송 준비 24 시간
365 일 보장
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사양
| Supplier | Texas Instruments |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | FemtoFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 12 V |
| Current-ContinuousDrain(Id)@25°C | 2.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 180mOhm @ 500mA, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 1.4 nC @ 4.5 V |
| Vgs(Max) | 8V |
| InputCapacitance(Ciss)(Max)@Vds | 200 pF @ 6 V |
| PowerDissipation(Max) | 500mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 3-PICOSTAR |
개요
Description
Key points:
- Type: N-channel enhancement-mode MOSFET
- Typical uses: synchronous buck/DC-DC converters, load switches, motor drivers
- Features: very low on-resistance (Rds(on)) and low gate charge for efficient, compact power designs; available in a small 6-pin package (SON-6/DFN-6 style)
- Drive: gate supplied by logic-level voltages (4.5V or similar, depending on device variant)
- Specs: Vds rating and exact Rds(on), Qgs, Qgd, and package details are in the TI datasheet
For precise values and pinout, refer to the TI datasheet and application notes.
Features
- N-channel, enhancement-mode power MOSFET
- VDS: 30 V
- Very low RDS(on) (milliohm range) for high-efficiency switching
- Logic-level gate drive with low gate charge for fast switching and reduced drive losses
- Advanced trench/Power MOSFET structure for high current capability and good thermal performance
- Small package suitable for dense, compact layouts (flat, low-profile 2x2 mm DFN-type footprint)
- Integrated body diode; suitable for synchronous switching applications
- RoHS-compliant and lead-free
- Applications: DC-DC converters, buck/boost regulators, load switches, point-of-load and other high-frequency power-switching needs
Package
Pinout
- Pin 1: Gate (G) — control input to turn the MOSFET on/off.
- Pin 2: Source (S) — current return/reference for the channel.
- Pin 3: Drain (D) — main current input/output.
- Pin 4: Exposed thermal/ground pad (large metal pad) — electrically connected to the Drain for heat dissipation and low RDS(on).
(Refer to the official TI datasheet for the exact package pin numbering and PCB footprint.)
Manufacturer
What kind of company: TI is a U.S.-based multinational semiconductor company that designs and manufactures analog, mixed-signal and embedded processing products (including power MOSFETs, power-management ICs, microcontrollers and other integrated circuits) for industrial, automotive, consumer and communications markets.
Application
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