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CSD17556Q5B
MOSFET N-CH 30V 34A/100A 8VSON
- 제조업체
- Mfr.부분 #CSD17556Q5B
- 패키지 PowerTDFN-8
- 데이터시트
- 재고 있음5216
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT),Bulk |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 34A (Ta), 100A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 1.4mOhm @ 40A, 10V |
| Vgs(th)(Max)@Id | 1.65V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 39 nC @ 4.5 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 7020 pF @ 15 V |
| PowerDissipation(Max) | 3.1W (Ta), 191W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 8-VSON-CLIP (5x6) |
개요
Description
Features
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 55V, making it suitable for a range of applications.
2. Current Rating: Can handle continuous drain current (ID) of up to 175A, ideal for high-power applications.
3. Low RDS(on): Offers a low on-resistance of around 4.5 mΩ, which helps in reducing conduction losses and improving efficiency.
4. Fast Switching Speed: Provides rapid switching capabilities, enhancing performance in switching applications.
5. Package Type: Available in a TO-220 package, facilitating effective heat dissipation and easy integration into designs.
6. Thermal Performance: Designed for high thermal performance, allowing for reliable operation under demanding conditions.
7. Applications: Suitable for use in DC-DC converters, motor drives, and other power management systems.
These features make the CSD17556Q5B an excellent choice for designers looking for efficiency and reliability in power applications.
Package
Pinout
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The terminal through which current flows out of the MOSFET when it is on.
3. Source (S): The terminal through which current enters the MOSFET.
4. Tab/Case: Usually connected to the Source, providing thermal dissipation and mechanical support.
5. Body Diode: An intrinsic diode formed between the source and drain, allowing current to flow in reverse when the MOSFET is off.
The CSD17556Q5B is designed for applications requiring low on-resistance and high-speed switching, making it suitable for power management and converter circuits.
Manufacturer
Application
Equivalent
배송
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지불
Payment Methods
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