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CSD25310Q2
MOSFET P-CH 20V 20A 6WSON
- 제조업체
- Mfr.부분 #CSD25310Q2
- 패키지 WSON-6
- 데이터시트
- 재고 있음3937
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | NexFET™ |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 20A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.8V, 4.5V |
| RdsOn(Max)@IdVgs | 23.9mOhm @ 5A, 4.5V |
| Vgs(th)(Max)@Id | 1.1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.7 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 655 pF @ 10 V |
| PowerDissipation(Max) | 2.9W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | 6-WSON (2x2) |
개요
Description
The module may involve hands-on projects, collaborative work, and assessments that emphasize practical skills and theoretical knowledge. Students can expect to engage in problem-solving exercises, programming assignments, and possibly group discussions that enhance their understanding of the subject matter.
To gain a comprehensive understanding of CSD25310Q2, it’s advisable to refer to the specific syllabus or course outline provided by the educational institution, which will detail the objectives, learning outcomes, and assessment methods for the course.
Features
1. Low RDS(on): It boasts a low on-resistance of approximately 10 mΩ, which enhances efficiency by minimizing conduction losses.
2. High Voltage Rating: The device can handle drain-source voltages up to 30V, making it suitable for various applications.
3. Fast Switching: It supports rapid switching speeds, improving performance in applications like synchronous rectification and DC-DC converters.
4. Compact Package: Available in a compact 5x6 mm QFN package, it is ideal for space-constrained designs.
5. Thermal Performance: With good thermal management characteristics, it can effectively dissipate heat, increasing reliability and longevity.
6. Low Gate Charge (Qg): This feature allows for reduced drive power requirements, enhancing overall efficiency in operation.
These attributes make the CSD25310Q2 suitable for a range of applications, including power supplies, battery management systems, and motor drives.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching action.
2. Drain (D): The terminal through which the load current flows.
3. Source (S): The terminal connected to the ground or the negative side of the circuit.
4. Body Diode: Internal diode allowing current to flow from the source to the drain when the MOSFET is off.
The specific pinout generally follows the standard for surface mount packages (like DPAK or similar), which can be referenced in the datasheet for precise arrangement. This MOSFET is designed for applications like power management, DC-DC converters, and motor control due to its low on-resistance and fast switching capabilities. Always consult the manufacturer's datasheet for detailed specifications and electrical characteristics.
Manufacturer
Application
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