CSD86330Q3D

이미지는 참조용만

CSD86330Q3D

MOSFET 2N-CH 25V 20A 8LSON

  • 제조업체
  • Mfr.부분 #CSD86330Q3D
  • 패키지 8-PowerLDFN
  • 데이터시트
  • 재고 있음7624

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
Series NexFET™
ProductStatus Active
FETType 2 N-Channel (Half Bridge)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 25V
Current-ContinuousDrain(Id)@25°C 20A
RdsOn(Max)@IdVgs 9.6mOhm @ 14A, 8V
Vgs(th)(Max)@Id 2.1V @ 250µA
GateCharge(Qg)(Max)@Vgs 6.2nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 920pF @ 12.5V
Power-Max 6W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerLDFN

개요

Description

CSD86330Q3D is a high-performance, synchronous step-down power module from Texas Instruments. It is designed for applications requiring a compact, efficient power supply solution, such as in telecommunications, industrial, and consumer electronics. The module integrates a power stage with a controller, offering high efficiency and ease of use while minimizing external component count. With an input voltage range of 4.5V to 17V and an output current capability of up to 3A, it provides excellent load transient response and thermal performance. Key features include adjustable output voltage, built-in protection mechanisms (overcurrent, thermal shutdown), and a compact package that facilitates space-saving designs. The CSD86330Q3D is suitable for a variety of applications, including powering FPGAs, processors, and other digital loads, making it a versatile choice for designers seeking reliable and efficient power solutions.

Features

The CSD86330Q3D is a high-performance power MOSFET designed for use in various applications, including power management and DC-DC converters. Its main features include:
1. Low On-Resistance (Rds(on)): This ensures efficient power conversion with minimal energy loss.
2. High Voltage Rating: Typically rated for up to 30V, making it suitable for various power supply applications.
3. Low Gate Charge (Qg): Reduces switching losses and improves efficiency, beneficial for high-frequency operations.
4. Thermal Performance: Designed for enhanced thermal management, allowing for better heat dissipation and reliability.
5. Compact Package: Available in a small footprint, facilitating space-saving designs in modern electronics.
6. Robustness: Built to withstand challenging operating conditions, ensuring long-term reliability.
Overall, the CSD86330Q3D is ideal for applications such as battery management systems, power supply circuits, and electric vehicles where efficiency and reliability are critical.

Package

The CSD86330Q3D is packaged in a VQFN (Very Thin Quad Flat No-lead) format, specifically a 3 mm x 3 mm package. This type of packaging allows for efficient thermal management and a compact footprint suitable for high-density applications.

Pinout

The CSD86330Q3D is a power MOSFET from Texas Instruments with a pin count of 8. It is designed for high-efficiency power management applications. The pin functions are as follows:
1. GATE (Pin 1): Gate control for turning the MOSFET on/off.
2. DRAIN (Pins 2, 3, 4): The output pin connected to the load; it conducts current.
3. SOURCE (Pin 5): Common reference point, typically connected to ground.
4. GND (Pin 6): Ground reference for the control circuitry.
5. GND (Pin 7): Another ground pin for enhanced thermal performance.
6. GATE (Pin 8): Additional gate connection for improved drive capability.
These pins facilitate the operation of the device in various power applications, ensuring efficient performance and thermal management.

Manufacturer

The CSD86330Q3D is manufactured by Texas Instruments (TI), a global semiconductor company. Founded in 1930, Texas Instruments is headquartered in Dallas, Texas, and is known for designing and manufacturing a wide range of analog and digital semiconductor devices. Their products are used in various applications, including automotive, industrial, communications, and consumer electronics. TI specializes in analog chips, embedded processors, and digital signal processors, playing a significant role in the development of technology across multiple sectors. The company is also recognized for its commitment to innovation and sustainability in the semiconductor industry.

Application

The CSD86330Q3D is a Power MOSFET driver used in various applications including DC-DC converters, power management systems, motor drives, and industrial automation. It is designed for high efficiency and can handle high switching frequencies, making it suitable for compact and high-performance designs in consumer electronics, renewable energy systems, and electric vehicle powertrains.

Equivalent

The CSD86330Q3D is a power MOSFET from Texas Instruments. Equivalent products include:
1. IRF3205 (Infineon)
2. BSC050N06LS (Vishay)
3. STP75NF75 (STMicroelectronics)
4. AO3401 (Alpha & Omega Semiconductor)
Ensure to check parameters like V_DS, R_DS(on), and package type for compatibility.

배송

배송 방법We

DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.


배송 요금 참조 (DHL/FedEx):

DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.

FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.

EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.

등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.

지불

Payment Methods

지불 기간은 100% 사전 지불입니다.

현재, 우리는 아래 지불 방법만 받아들입니다.:

1. PayPal

2. 신용/직불 카드

3. 전선 전송