이미지는 참조용만

CY7C25652KV18-500BZXC

Name: CY7C25652KV18-500BZXC
Rating: 4.7 (12 reviews)

IC SRAM 72MBIT PAR 165FBGA

제조업체Infineon Technologies
Mfr.부분 #CY7C25652KV18-500BZXC
패키지
데이터시트
재고 있음20

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Part Status	Active
DigiKey Programmable	Not Verified
Memory Type	Volatile
Memory Format	SRAM
Technology	SRAM - Synchronous, QDR II+
Memory Size	72Mbit
Memory Organization	2M x 36
Memory Interface	Parallel
Voltage - Supply	1.7V ~ 1.9V
Operating Temperature	0°C ~ 70°C (TA)
Mounting Type	Surface Mount
Package / Case	165-LBGA
Supplier Device Package	165-FBGA (13x15)
Base Product Number	CY7C25652
Clock Frequency	500 MHz

개요

Description

The CY7C25652KV18-500BZXC is a high-performance, 256Mb (32MB) synchronous dynamic random-access memory (SDRAM) chip manufactured by Cypress Semiconductor. It operates at a voltage of 1.8V, making it suitable for low-power applications. This memory device uses a double data rate (DDR) interface, allowing data to be transferred on both the rising and falling edges of the clock signal, which effectively doubles the data rate compared to traditional SDRAM.
Key features include a 500 MHz data rate, a 64-bit wide data bus, and support for various memory access modes, including burst mode. The chip is designed to provide high bandwidth and low latency, making it ideal for applications such as mobile devices, consumer electronics, and industrial systems that require efficient memory performance.
Additionally, the CY7C25652KV18-500BZXC features on-chip self-refresh and power-saving modes, enhancing energy efficiency in battery-operated devices. Its compact form factor and advanced technology make it a preferred choice for developers looking to optimize memory solutions in modern electronics.

Features

The CY7C25652KV18-500BZXC is a high-performance SRAM (Static Random Access Memory) device with the following key features:
1. Density: 2 Megabits (256 K x 8).
2. Speed: Access times of 500 ns.
3. Voltage: Operates typically at 1.8V, making it suitable for low-power applications.
4. Interface: Asynchronous interface with easy integration into various systems.
5. Packaging: Available in a compact 48-pin TSOP (Thin Small Outline Package).
6. Write Cycle Time: Fast write capabilities to enhance performance.
7. Data Retention: Excellent data retention properties for reliable storage.
8. Low Power Consumption: Designed for minimal power usage, ideal for battery-operated devices.
9. Temperature Range: Operating temperature from -40°C to 85°C, suitable for industrial applications.
Overall, the CY7C25652KV18-500BZXC is well-suited for applications requiring fast, reliable memory in space-constrained environments.

Package

The CY7C25652KV18-500BZXC is packaged in a 64-pin Thin Quad Flat No-lead (TQFN) package.

Pinout

The CY7C25652KV18-500BZXC is a 256Mb (32MB) synchronous dynamic random-access memory (SDRAM) device with a pin count of 78. It operates at a voltage of 1.8V and supports a variety of functions essential for memory operations, including data storage, addressing, and control signals.
Key functions include:
- Address Inputs (A0-A14): For selecting memory locations.
- Data Inputs/Outputs (DQ0-DQ31): For data transfer.
- Control Signals (CK, CK#, CS#, RAS#, CAS#, WE#): For managing read/write operations and synchronization.
- Power Pins (VDD, VSS): For supplying power to the device.
- Data Mask (DM): To control write operations on specific data bytes.
This device is commonly used in applications requiring high-speed data access and efficient memory management.

Manufacturer

The manufacturer of the CY7C25652KV18-500BZXC is Cypress Semiconductor Corporation, which is a subsidiary of Infineon Technologies AG. Cypress is known for producing a wide range of semiconductor products, including memory, microcontrollers, and analog components. The company specializes in solutions for automotive, industrial, consumer, and IoT applications. Cypress has a strong focus on innovation and is recognized for its high-performance and reliable products.

Application

The CY7C25652KV18-500BZXC is a high-performance SRAM chip used in various applications, including networking equipment, telecommunications, industrial automation, and consumer electronics. It is suitable for cache memory, buffering, and data storage in systems requiring fast access times and low latency, such as routers, switches, and embedded systems. Additionally, it serves in automotive applications for real-time processing and in medical devices for data management.

Equivalent

The CY7C25652KV18-500BZXC is a high-performance SRAM chip. Equivalent products include the Micron MT41K256M16HA-125 and the ISSI IS61WV25616BLL-10T. Always verify compatibility in terms of voltage, speed, and pin configuration before substitution.