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DMN2991UFZ-7B
MOSFET N-CH 20V 550MA 3DFN
- 제조업체
- Mfr.부분 #DMN2991UFZ-7B
- 패키지
- 데이터시트 DMN2991UFZ-7B DataSheet
- 재고 있음2444
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사양
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 20 V |
| Current-ContinuousDrain(Id)@25°C | 550mA (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 1.2V, 4.5V |
| RdsOn(Max)@IdVgs | 990mOhm @ 100mA, 4.5V |
| Vgs(th)(Max)@Id | 1V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 0.35 nC @ 4.5 V |
| Vgs(Max) | ±8V |
| InputCapacitance(Ciss)(Max)@Vds | 21.5 pF @ 16 V |
| PowerDissipation(Max) | 530mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | X2-DFN0606-3 |
개요
Description
DMN2991UFZ-7B is a small-format N-channel enhancement-mode power MOSFET used as a switching transistor in power electronics. It belongs to the DMN2991 family and comes in the UFZ package with a -7B variant code. The device is driven by a logic-level gate and provides low on-resistance and good current capability in a compact package, making it suitable for DC-DC converters, load switches, and motor drivers. Key electricals—drain-source voltage (Vds), continuous drain current (Id), on-resistance (Rds(on)), gate threshold (Vgs(th)), and switching characteristics—are specified in the supplier’s datasheet. The -7B suffix mainly denotes packaging/lot information. For exact figures and thermal limits, consult the official datasheet from the manufacturer. If you share the supplier, I can summarize the precise specs.
Package
Package type: 8-pin small-outline SO-8 (surface-mount) package. DMN2991UFZ-7B is a dual N-channel MOSFET in an SO-8 body. For exact mechanical details and pinout, please refer to the official datasheet.
Pinout
- Pin count: 7 pins
- Function: Dual N-channel enhancement-mode MOSFET pair in one package, intended for power-switching applications (e.g., high-side/low-side switching in DC-DC converters or load switching).
- Function: Dual N-channel enhancement-mode MOSFET pair in one package, intended for power-switching applications (e.g., high-side/low-side switching in DC-DC converters or load switching).
Manufacturer
Manufacturer: ON Semiconductor.
What kind of company: A global American semiconductor company that designs and manufactures analog, discrete, and power semiconductor devices (e.g., MOSFETs, diodes, ICs) for automotive, industrial, and consumer markets.
What kind of company: A global American semiconductor company that designs and manufactures analog, discrete, and power semiconductor devices (e.g., MOSFETs, diodes, ICs) for automotive, industrial, and consumer markets.
Application
DMN2991UFZ-7B is a N-channel enhancement-mode power MOSFET. Typical applications:
- DC-DC converters and switching regulators
- Load switches and power-management circuits
- Motor drive and PWM control
- Automotive and industrial power electronics
- Battery-powered and portable devices
Note: reference the datasheet for exact Vds, Id, Rds(on), and packaging details.
- DC-DC converters and switching regulators
- Load switches and power-management circuits
- Motor drive and PWM control
- Automotive and industrial power electronics
- Battery-powered and portable devices
Note: reference the datasheet for exact Vds, Id, Rds(on), and packaging details.
배송
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