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DMN53D0LQ-7
MOSFET N-CH 50V 500MA SOT23
- 제조업체
- Mfr.부분 #DMN53D0LQ-7
- 패키지
- 데이터시트
- 재고 있음6626
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 50 V |
| Current - Continuous Drain (Id) @ 25°C | 500mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 10V |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.6 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 46 pF @ 25 V |
| Power Dissipation (Max) | 370mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | DMN53 |
개요
Description
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of around 30V.
2. Current Handling: It can handle continuous drain current (I_D) of up to 30A, depending on the package and thermal conditions.
3. Low On-Resistance: It boasts a low R_DS(on), improving efficiency and reducing heat generation during operation.
4. Fast Switching Speed: Suitable for high-frequency applications due to its rapid switching capabilities.
5. Thermal Performance: Designed with a robust thermal management profile, facilitating efficient heat dissipation.
6. Package Type: Often found in compact surface-mount packages like DPAK or SO-8, making it suitable for space-constrained applications.
7. Applications: Commonly used in DC-DC converters, motor drives, and other power switching applications.
These features make the DMN53D0LQ-7 an effective choice for modern electronic designs requiring efficient power management.
Package
Pinout
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): The terminal through which the output current flows when the MOSFET is on.
3. Source (S): The terminal from which the current enters when the device is in operation.
4. Body (substrate): Internally connected to the source in most MOSFETs, often not explicitly pin-connected.
This component is designed for low-voltage applications, often used in power management and signal switching. Its specifications make it suitable for consumer electronics, automotive, and industrial applications.
Manufacturer
Application
Equivalent
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