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DMN6068SE-13
MOSFET N-CH 60V 4.1A SOT223
- 제조업체
- Mfr.부분 #DMN6068SE-13
- 패키지 TO-261-4,TO-261AA
- 데이터시트 DMN6068SE-13 DataSheet
- 재고 있음7688
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365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 60 V |
| Current-ContinuousDrain(Id)@25°C | 4.1A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 68mOhm @ 12A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 10.3 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 502 pF @ 30 V |
| PowerDissipation(Max) | 2W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SOT-223-3 |
개요
Description
Key specifications include a low gate threshold voltage, fast switching speeds, and a robust thermal performance, enabling it to handle high currents with minimal heat generation. The compact package design allows for easy integration into circuit boards.
Overall, DMN6068SE-13 offers reliability and efficiency for modern electronic designs, helping to optimize performance in energy-sensitive applications.
Features
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium-voltage applications.
2. Current Rating: It can handle continuous drain currents of up to 65A, providing robust performance for high-load conditions.
3. R_DS(on): The on-resistance is low, around 0.022Ω, which minimizes conduction losses and enhances efficiency.
4. Package: It is housed in a compact SO-8 package that supports efficient thermal dissipation, allowing for reliable operation in confined spaces.
5. Fast Switching: The device exhibits fast switching capabilities, making it ideal for high-frequency applications.
6. Gate-Source Voltage: It has a maximum gate-source voltage (V_GS) rating of ±20V, providing flexibility in gate drive designs.
These features make the DMN6068SE-13 suitable for applications in power supplies, motor drivers, and other electronic circuits requiring efficient power management.
Package
Pinout
1. Gate (G): Controls the MOSFET operation.
2. Drain (D): The terminal through which the current flows out when the device is on.
3. Source (S): The terminal through which the current enters when the device is on.
4. Body (B): The substrate of the device, typically connected to the source in N-channel MOSFETs.
This device is commonly used in power management applications, including load switching and as a switch in power supply circuits. The DMN6068SE-13 is known for its low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.
Manufacturer
Application
Equivalent
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