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DMN6140LQ-7
MOSFET N-CH 60V 1.6A SOT23
- 제조업체
- Mfr.부분 #DMN6140LQ-7
- 패키지
- 데이터시트 DMN6140LQ-7 DataSheet
- 재고 있음3271
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사양
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 1.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 1.8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8.6 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 315 pF @ 40 V |
| Power Dissipation (Max) | 700mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | DMN6140 |
개요
Description
Additionally, the DMN6140LQ-7 showcases fast switching speeds, making it ideal for high-frequency applications. Its robust thermal characteristics allow for effective heat dissipation, ensuring reliable operation under demanding conditions. Overall, this MOSFET is a versatile choice for engineers seeking efficient and reliable performance in their electronic designs.
Features
1. Voltage Rating: It typically supports a drain-source voltage (V_DS) of up to 40V.
2. Current Rating: It can handle a continuous drain current (I_D) of around 60A, making it suitable for high-power applications.
3. R_DS(on): The on-resistance is low, typically around 9.5 mΩ, which ensures efficient operation and minimal heat generation.
4. Gate Threshold Voltage: The gate-source threshold voltage (V_GS(th)) is around 2-4V, facilitating easy drive with standard logic levels.
5. Package Type: It comes in a TO-220 package, providing excellent thermal performance and ease of mounting.
6. Fast Switching: The device is optimized for fast switching speeds, suitable for applications in power inverters, converters, and other power management circuits.
7. Applications: Commonly used in automotive, industrial, and consumer electronics.
Overall, the DMN6140LQ-7 is a versatile and efficient solution for high-current and high-voltage applications.
Package
Pinout
1. Gate 1 (G1) - Control input for the first N-channel MOSFET.
2. Drain 1 (D1) - Output for the first N-channel MOSFET, where the load is connected.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET, typically connected to ground.
4. Gate 2 (G2) - Control input for the second N-channel MOSFET.
5. Drain 2 (D2) - Output for the second N-channel MOSFET, where the load is connected.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET, typically connected to ground.
7. D1/D2 (common pin) - This configuration allows both MOSFETs to share a common connection point.
8. S1/S2 (common pin) - Allows for connections in specific configurations depending on the circuit design.
This device is commonly used for switching and amplification applications in various electronic circuits.
Manufacturer
Diodes Incorporated is known for its focus on innovation and quality, providing solutions that meet the demands of modern electronic systems. The company operates globally, with a significant presence in North America, Asia, and Europe, catering to a diverse customer base in the electronics industry.
Application
Equivalent
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