이미지는 참조용만

DMN65D8LQ-7

Name: DMN65D8LQ-7
Rating: 4.7 (12 reviews)

MOSFET N-CH 60V 310MA SOT23

제조업체
Mfr.부분 #DMN65D8LQ-7
패키지
데이터시트
재고 있음4399

+BOM은 RFQ는

100% 원래 &새로운

배송 준비 24 시간

365 일 보장

RFQ 및더 많은 할인

사양

Supplier	Diodes Incorporated
Package	Tape & Reel (TR),Cut Tape (CT)
ProductStatus	Active
FETType	N-Channel
Technology	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	60 V
Current-ContinuousDrain(Id)@25°C	310mA (Ta)
DriveVoltage(MaxRdsOnMinRdsOn)	5V, 10V
RdsOn(Max)@IdVgs	3Ohm @ 115mA, 10V
Vgs(th)(Max)@Id	2V @ 250µA
GateCharge(Qg)(Max)@Vgs	0.87 nC @ 10 V
Vgs(Max)	±20V
InputCapacitance(Ciss)(Max)@Vds	22 pF @ 25 V
PowerDissipation(Max)	370mW (Ta)
OperatingTemperature	-55°C ~ 150°C (TJ)
MountingType	Surface Mount
SupplierDevicePackage	SOT-23-3

개요

Description

DMN65D8LQ-7 is a N-channel power MOSFET (enhancement mode) in the DMN65D8LQ-7 family from Nexperia/NXP. It’s designed for high‑voltage switching applications such as DC‑DC converters, motor drivers, and load switches.
Key points:
- Voltage/role: High‑voltage N‑channel MOSFET for switching power stages.
- Rating hint: The “65” suggests about 65 V drain–source rating.
- Package: LQ‑type surface-mount package; suitable for compact, thermally managed layouts.
- Performance: Aims for low on‑resistance and fast switching; check the datasheet for exact Id, Rds(on), gate threshold, and thermal data.
- Variant note: The “-7” suffix identifies a particular revision/grade; verify exact electrical specs and footprint in the datasheet.
For precise numbers (Vds, Id, Rds(on) at a given Vgs, thermal resistance, and package footprint), consult the official DMN65D8LQ‑7 datasheet on Nexperia’s site or authorized distributors.

Features

DMN65D8LQ-7 is a compact N-channel enhancement MOSFET. Key features (typical for this family):
- VDS: 65 V
- RDS(on): very low milliohms (typical around 7–8 mΩ at VGS ≈ 4.5 V; lower with higher gate drive)
- High current capability (tens of amps, depends on package and mounting)
- Trench-gate technology for fast switching and low gate charge
- Avalanche ruggedness and good dv/dt tolerance for switching power applications
- Gate drive suitable for logic-level operation (VGS(th) ~1–3 V; designed for efficient switching)
- RoHS-compliant, lead-free; suitable for surface-mount use
- Typical applications: synchronous buck DC-DC converters, power switches in motor drives, and other high-efficiency switching power supplies
Note: exact parameters vary by lot and package. For precise numbers, consult the specific datasheet and package variant.

Package

It’s an 8‑pin QFN (leadless) package.

Pinout

Pin count: 3.
Function: N‑channel enhancement‑mode MOSFET (three terminals: Gate, Drain, Source) used for low‑voltage switching, load control and power switching (control input on Gate, current path between Drain and Source).

Manufacturer

The DMN65D8LQ-7 is made by Diodes Incorporated. Diodes Incorporated is a global semiconductor company that designs and manufactures discrete semiconductors, analog and mixed-signal ICs (including MOSFETs, diodes, rectifiers and power-management devices).

Equivalent

Common equivalents are any logic‑level N‑channel MOSFET in SOT‑23 with VDS ≥ the DMN65D8LQ‑7 rating and similar RDS(on) and VGS(th). Typical drop‑in substitutes: 2N7002, BSS138 and Si2302 (check pinout, RDS(on), VDS and package). Always verify electrical specs and footprint before replacing.