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DMP4047LFDE-7
MOSFET P-CH 40V 3.3A 6UDFN
- 제조업체
- Mfr.부분 #DMP4047LFDE-7
- 패키지
- 데이터시트 DMP4047LFDE-7 DataSheet
- 재고 있음5816
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사양
| Supplier | Diodes Incorporated |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 3.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 33mOhm @ 4.4A, 10V |
| Vgs(th)(Max)@Id | 2.2V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 23.2 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1382 pF @ 20 V |
| PowerDissipation(Max) | 700mW (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | U-DFN2020-6 (Type E) |
개요
Description
The device has a fast switching speed, making it ideal for high-frequency applications. It comes in a TO-220 package, providing good thermal performance and ease of heatsinking. The DMP4047LFDE-7 also offers a low gate threshold voltage (V_GS(th)), allowing for easier drive requirements.
Overall, this MOSFET is a reliable choice for engineers seeking efficient and compact solutions in power electronics.
Features
1. Voltage Rating: Provides a maximum drain-source voltage (V_DS) of 40V, suitable for various power applications.
2. Current Handling: Capable of handling continuous drain current (I_D) up to 50A, making it ideal for high-current applications.
3. R_DS(on): Low on-resistance (R_DS(on)) of about 10mΩ at 10V gate drive, which minimizes power loss during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage (V_GS(th)) of 2-4V, allowing for efficient switching at lower voltages.
5. Package: Available in a compact SO-8 package, which facilitates space-saving designs and improved thermal performance.
6. Fast Switching: Designed for quick switching speeds, enhancing performance in high-frequency applications.
These attributes make the DMP4047LFDE-7 suitable for use in DC-DC converters, battery management systems, and other power electronic circuits.
Package
Pinout
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where the current flows out.
3. Source (S) - The input terminal where the current flows into.
4. Body Diode - Integrated diode that provides reverse current path.
5. Substrate (B) - Connects to the source for proper operation.
The part is commonly used in applications such as power management, switching converters, and load driving due to its fast switching capability and low on-resistance. The pin arrangement and specific functions may vary slightly based on the package type, so it's advisable to refer to the datasheet for detailed pin configuration and electrical characteristics.
Manufacturer
Application
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