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DN3525N8-G
MOSFET N-CH 250V 360MA TO243AA
- 제조업체
- Mfr.부분 #DN3525N8-G
- 패키지
- 데이터시트 DN3525N8-G DataSheet
- 재고 있음18656
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사양
| Supplier | Microchip Technology |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 250 V |
| Current-ContinuousDrain(Id)@25°C | 360mA (Tj) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 0V |
| RdsOn(Max)@IdVgs | 6Ohm @ 200mA, 0V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 350 pF @ 25 V |
| FETFeature | Depletion Mode |
| PowerDissipation(Max) | 1.6W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-243AA (SOT-89) |
개요
Description
Its package typically allows for efficient thermal dissipation, ensuring reliable performance under load. The DN3525N8-G supports a wide range of gate voltages, making it suitable for various circuit designs. Additionally, with its fast switching capabilities, it is ideal for applications requiring rapid on-off control, such as in DC-DC converters and motor drives.
Overall, the DN3525N8-G is a versatile component that combines efficiency, reliability, and ease of integration, making it a popular choice for engineers looking to enhance the performance of their electronic systems.
Features
1. Low On-Resistance (Rds(on)): Provides efficient current conduction, reducing power losses.
2. High Voltage Rating: Suitable for applications requiring up to 25V, ensuring reliability in high-voltage circuits.
3. Fast Switching Speed: Enables quick response times in switching applications, enhancing overall performance.
4. Compact Package: Typically housed in a small footprint TO-252 or similar package, facilitating easier integration into circuit designs.
5. Robust Thermal Performance: Designed to manage heat effectively, allowing for higher current handling and improved durability.
6. Gate Threshold Voltage: Optimized for low-voltage drive, making it compatible with a variety of control circuits.
Overall, the DN3525N8-G is ideal for applications requiring efficient power management with minimal footprint and robust performance.
Package
Pinout
The pin configuration is typically as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Output for the first N-channel MOSFET.
3. Source 1 (S1) - Ground reference for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Output for the second N-channel MOSFET.
6. Source 2 (S2) - Ground reference for the second N-channel MOSFET.
7. N.C. - No connection.
8. N.C. - No connection.
This MOSFET is valued for its efficiency and ability to handle substantial current levels in compact designs.
Manufacturer
Application
Equivalent
배송
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DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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