DRV5013ADQDBZR

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DRV5013ADQDBZR

MAGNETIC SWITCH LATCH SOT23-3

  • 제조업체
  • Mfr.부분 #DRV5013ADQDBZR
  • 패키지 SOT-23 (DBZ)-3
  • 데이터시트
  • 재고 있음7980

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사양

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
Function Latch
Technology Hall Effect
Polarization South Pole
SensingRange 5mT Trip, -5mT Release
TestCondition -40°C ~ 125°C
Voltage-Supply 2.7V ~ 38V
Current-Supply(Max) 2.7mA (Typ)
Current-Output(Max) 30mA
OutputType Open Drain
Features Temperature Compensated
OperatingTemperature -40°C ~ 125°C (TA)
MountingType Surface Mount
SupplierDevicePackage SOT-23-3

개요

Description

The DRV5013ADQDBZR is a magnetic Hall effect sensor produced by Texas Instruments. It is designed to detect magnetic fields and operates as a unipolar switch, meaning it responds to magnetic fields of a specific orientation. This sensor is commonly used in applications requiring position detection, rotational speed detection, and proximity sensing.
Key features include a wide operating voltage range, low power consumption, and a robust design suitable for harsh environments. It operates over a broad temperature range, making it versatile for various industrial and consumer applications. The device is housed in a small SOT-23 package, facilitating easy integration into circuit designs.
The DRV5013ADQDBZR is part of the DRV5013 family, which is known for its high sensitivity and precision in detecting magnetic fields. It provides a digital output, which changes state when the magnetic field exceeds a certain threshold, allowing it to interact seamlessly with microcontrollers and other digital systems.
Overall, the DRV5013ADQDBZR is a reliable choice for engineers seeking a compact and efficient solution for magnetic field detection in electronic systems.

Features

The DRV5013ADQDBZR is a Hall effect sensor from Texas Instruments, designed for magnetic sensing applications. Key features include:
1. Magnetic Sensitivity: It has a unipolar switch configuration with a typical magnetic flux density threshold of 6.3 mT, making it suitable for precise magnetic field detection.
2. Supply Voltage: Operates over a wide supply voltage range from 2.5 V to 38 V, allowing flexibility in power source selection.
3. Low Power Consumption: The sensor is optimized for low power usage, typically consuming just 2.5 mA, making it suitable for battery-operated devices.
4. Output: Provides a digital output that changes state based on the magnetic field presence, facilitating easy interfacing with digital circuits.
5. Temperature Range: Functions effectively over an extended temperature range from -40°C to 125°C, ideal for automotive and industrial environments.
6. Package: Offered in a SOT-23 package, which is compact and suitable for space-constrained applications.
7. Robustness: Built with protection features such as reverse polarity protection and output short-circuit protection, enhancing reliability.
These features make the DRV5013ADQDBZR a versatile choice for various applications requiring reliable and efficient magnetic field sensing.

Package

The DRV5013ADQDBZR is a Hall effect sensor from Texas Instruments. It comes in a surface-mount SOT-23 package, specifically a 3-pin SOT-23 (DBZ) configuration. This package type is compact and suitable for various applications requiring magnetic field detection.

Pinout

The DRV5013ADQDBZR is a Hall effect magnetic sensor from Texas Instruments. It comes in a 3-pin SOT-23 package. The pin functions are as follows:
1. Pin 1 (VCC): This is the power supply pin. It supplies the voltage required for the sensor to operate. The typical operating voltage range is from 2.5V to 38V.
2. Pin 2 (GND): This is the ground pin. It serves as the reference point for the input and output voltages of the sensor and is connected to the system ground.
3. Pin 3 (OUT): This is the output pin. It provides a digital output corresponding to the presence and polarity of a magnetic field. The output is low when a south magnetic pole is detected near the face of the device and high when no magnetic field is present or a north pole is detected.
The DRV5013ADQDBZR is used for contactless position and speed sensing in various applications, including motor commutation, position detection, and encoder systems.

Manufacturer

The DRV5013ADQDBZR is manufactured by Texas Instruments (TI). Texas Instruments is a global semiconductor company that designs and produces a broad range of electronic components, including integrated circuits, processors, sensors, and other semiconductor devices. With its headquarters in Dallas, Texas, the company is a leader in the electronics industry and serves a wide array of markets, including industrial, automotive, personal electronics, communications, and enterprise systems. Texas Instruments is known for its innovation and extensive portfolio of analog and embedded processing products, which are used by engineers and designers worldwide to create advanced electronic systems and solutions.

Application

The DRV5013ADQDBZR is a Hall effect sensor typically used in applications such as motor control, position sensing, speed detection, and proximity sensing. It is suitable for automotive, industrial, and consumer electronics where reliable and contactless magnetic field detection is required. This sensor is often used in systems for brushless DC motor commutation, open/close detection in doors and lids, and as a limit switch in various devices.

Equivalent

The DRV5013ADQDBZR is a Hall effect sensor. Equivalent products include:
1. Allegro A1101EUA-T: Similar Hall effect latch with a 3.8V to 24V operating range.
2. Melexis MLX92212LUA-AAA-000-BU: Low-power Hall effect latch with similar functionality.
3. Honeywell SS461C: A bipolar Hall-effect sensor IC.
Ensure compatibility with your specific application requirements when selecting equivalents, as parameters like supply voltage, current consumption, and pin configuration may vary.

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