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EM638165TS-6G
- 제조업체
- Mfr.부분 #EM638165TS-6G
- 패키지
- 데이터시트
- 재고 있음10514
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Manufacturer | JLCPCB Assembly |
| Package | TSOP-54 |
개요
Description
The EM638165TS-6G is a 64Mb (megabit) SRAM (Static Random Access Memory) chip designed for high-speed data storage applications. It utilizes a 3.3V power supply and is built on CMOS technology, which offers lower power consumption and enhanced performance. The device operates with a fast access time, typically around 70ns, making it suitable for applications that require rapid data retrieval.
With a 16-bit data bus, the EM638165TS-6G can read and write data efficiently, supporting various operational modes. This chip is commonly used in telecommunications, consumer electronics, and automotive applications where reliable and swift data handling is crucial.
The chip comes in a compact, surface-mount package, facilitating easy integration into printed circuit boards (PCBs). Its design emphasizes durability and performance stability under varying environmental conditions, making it ideal for both commercial and industrial use. Overall, the EM638165TS-6G is a versatile solution for modern electronic systems that demand efficient memory solutions.
With a 16-bit data bus, the EM638165TS-6G can read and write data efficiently, supporting various operational modes. This chip is commonly used in telecommunications, consumer electronics, and automotive applications where reliable and swift data handling is crucial.
The chip comes in a compact, surface-mount package, facilitating easy integration into printed circuit boards (PCBs). Its design emphasizes durability and performance stability under varying environmental conditions, making it ideal for both commercial and industrial use. Overall, the EM638165TS-6G is a versatile solution for modern electronic systems that demand efficient memory solutions.
Features
The EM638165TS-6G is a 16-megabit (Mbit) DRAM memory chip from ESMT (Elite Semiconductor Memory Technology Inc.), designed for high-performance applications. Key features include:
1. Type: Asynchronous DRAM.
2. Capacity: 16Mbit (2M x 8-bit organization).
3. Operating Voltage: Typically operates at 3.3V.
4. Speed: Supports various speed grades, generally optimized for high-speed data processing.
5. Pin Count: Available in a compact 44-pin TSOP (Thin Small Outline Package) form factor, conducive for space-saving designs.
6. Refresh Cycle: Supports standard DRAM refresh cycles (typically 64ms).
7. Temperature Range: Suitable for industrial applications, often rated for a wide operating temperature range.
8. Compatibility: Compatible with standard DRAM interfaces, making it easy to integrate into various devices.
Ideal for applications like networking equipment, consumer electronics, and other embedded systems, the EM638165TS-6G balances performance with power efficiency.
1. Type: Asynchronous DRAM.
2. Capacity: 16Mbit (2M x 8-bit organization).
3. Operating Voltage: Typically operates at 3.3V.
4. Speed: Supports various speed grades, generally optimized for high-speed data processing.
5. Pin Count: Available in a compact 44-pin TSOP (Thin Small Outline Package) form factor, conducive for space-saving designs.
6. Refresh Cycle: Supports standard DRAM refresh cycles (typically 64ms).
7. Temperature Range: Suitable for industrial applications, often rated for a wide operating temperature range.
8. Compatibility: Compatible with standard DRAM interfaces, making it easy to integrate into various devices.
Ideal for applications like networking equipment, consumer electronics, and other embedded systems, the EM638165TS-6G balances performance with power efficiency.
Package
The EM638165TS-6G is packaged in a TSOP II (Thin Small Outline Package) format, which is a compact, surface-mount package commonly used for memory chips. It typically features a 54-pin configuration with a 300 mil width.
Pinout
The EM638165TS-6G is a 16 megabit (2 Meg x 8) DRAM chip with a pin count of 48. It is designed for low power consumption and operates at a clock frequency of up to 166 MHz.
Key functions and features include:
- Data Interface: 8-bit data width for efficient data transfer.
- Memory Type: It is a synchronous DRAM (SDRAM), which allows for higher performance through synchronized clocking.
- Operating Voltage: Typically operates at 3.3V.
- Access Time: Fast access times suitable for various applications.
- Functionality: Supports burst read and write modes, enabling fast data retrieval and storage.
The EM638165TS-6G is commonly used in consumer electronics, networking devices, and various computing applications requiring compact and efficient memory solutions.
Key functions and features include:
- Data Interface: 8-bit data width for efficient data transfer.
- Memory Type: It is a synchronous DRAM (SDRAM), which allows for higher performance through synchronized clocking.
- Operating Voltage: Typically operates at 3.3V.
- Access Time: Fast access times suitable for various applications.
- Functionality: Supports burst read and write modes, enabling fast data retrieval and storage.
The EM638165TS-6G is commonly used in consumer electronics, networking devices, and various computing applications requiring compact and efficient memory solutions.
Manufacturer
The EM638165TS-6G is manufactured by Etron Technology, Inc. Etron is a semiconductor company based in Taiwan that specializes in memory products, particularly DRAM (Dynamic Random-Access Memory) and other related technologies. Founded in 1991, Etron focuses on producing a variety of memory solutions for applications in consumer electronics, computers, and telecommunications. The company is known for its innovative designs and has a strong presence in the global memory market. Etron develops both standard and custom memory products to meet diverse customer needs across various industries.
Application
The EM638165TS-6G is a low-power 16Mb SRAM that is commonly used in applications such as portable devices, consumer electronics, automotive systems, and telecommunications. Its features make it suitable for cache memory, data buffering, and temporary storage in devices requiring fast access and lower power consumption.
Equivalent
The EM638165TS-6G is a 16Mb (2M x 8) synchronous dynamic RAM (SDRAM). Equivalent products include:
1. Micron MT48LC16M16A2P-75E
2. Samsung K4S281632E
3. Nanya NT5DS16M16C2
4. Hynix HY57V161620B
Make sure to check the specific datasheets for parameters like speed, timing, and voltage compatibility before selecting a substitute.
1. Micron MT48LC16M16A2P-75E
2. Samsung K4S281632E
3. Nanya NT5DS16M16C2
4. Hynix HY57V161620B
Make sure to check the specific datasheets for parameters like speed, timing, and voltage compatibility before selecting a substitute.
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
Payment Methods
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