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FAN7382N
IC GATE DRVR HALF-BRIDGE 8DIP
- 제조업체
- Mfr.부분 #FAN7382N
- 패키지 DIP-8
- 데이터시트
- 재고 있음2929
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tube |
| ProductStatus | Obsolete |
| DrivenConfiguration | Half-Bridge |
| ChannelType | Independent |
| NumberofDrivers | 2 |
| GateType | IGBT, N-Channel MOSFET |
| Voltage-Supply | 10V ~ 20V |
| LogicVoltage-VILVIH | 0.8V, 2.5V |
| Current-PeakOutput(SourceSink) | 350mA, 650mA |
| InputType | Non-Inverting |
| HighSideVoltage-Max(Bootstrap) | 600 V |
| Rise/FallTime(Typ) | 60ns, 30ns |
| OperatingTemperature | -40°C ~ 150°C (TJ) |
| MountingType | Through Hole |
| Package/Case | 8-DIP (0.300, 7.62mm) |
개요
Description
Key features of the FAN7382N include its ability to drive high-voltage, high-speed MOSFETs and IGBTs with optimized switching performance. It offers under-voltage lockout for both high-side and low-side gate drivers, ensuring reliable operation. The IC operates with a high supply voltage range, making it suitable for a wide variety of applications.
The FAN7382N is designed with protection features like built-in dead-time control to prevent shoot-through, and it supports bootstrap operation, which is essential for high-side driving. Its robust design helps in reducing power dissipation and improving the overall efficiency of the power management system.
Overall, the FAN7382N is a versatile and reliable choice for engineers looking to implement high-side gate driving in their designs, offering efficiency and performance in compact packaging.
Features
1. High-Side Gate Drive: Designed to drive high-side N-channel power devices, providing efficient switching.
2. Floating Channel: Can operate up to 600V, making it suitable for high-voltage applications.
3. Bootstrap Operation: Utilizes a bootstrap circuit for high-side drive, aiding in efficient charge management.
4. UVLO Protection: Under-voltage lockout (UVLO) for both the high-side and low-side drivers ensures reliable operation by preventing erroneous switching.
5. CMOS Schmitt-Trigger Inputs: Ensures noise immunity and precise switching due to its Schmitt-Trigger input structure.
6. Dual Gate Drive Outputs: Offers flexibility in driving two power transistors with separate high-side and low-side outputs.
7. Fast Turn-On/Off Times: Provides efficient switching performance with rapid turn-on and turn-off times.
8. Propagation Delay Matching: Features matched propagation delays between high-side and low-side to ensure synchronous operation.
These features make the FAN7382N suitable for applications like motor drives, power supplies, and DC-DC converters requiring efficient high-side switching.
Package
Pinout
1. VCC: Supply voltage input for powering the IC.
2. VB: High-side floating supply voltage.
3. HO: High-side gate drive output, connected to the gate of the high-side MOSFET or IGBT.
4. VS: High-side floating supply return. It is connected to the source of the high-side MOSFET or IGBT.
5. COM: Common ground reference for the IC.
6. LO: Low-side gate drive output, used for driving the low-side MOSFET or IGBT.
7. IN: Input signal for controlling the output states of HO and LO.
8. VSS: Ground return for the input logic.
The FAN7382N provides level-shifted gate drive outputs, allowing it to efficiently drive high-side and low-side power transistors in half-bridge or full-bridge configurations. It is commonly used in motor control and power supply applications.
Manufacturer
Application
Equivalent
배송
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배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
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UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
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