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FDC6306P
MOSFET 2P-CH 20V 1.9A SSOT6
- 제조업체
- Mfr.부분 #FDC6306P
- 패키지 TSOT-23-6
- 데이터시트 FDC6306P DataSheet
- 재고 있음3362
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | 2 P-Channel (Dual) |
| FETFeature | Logic Level Gate |
| DraintoSourceVoltage(Vdss) | 20V |
| Current-ContinuousDrain(Id)@25°C | 1.9A |
| RdsOn(Max)@IdVgs | 170mOhm @ 1.9A, 4.5V |
| Vgs(th)(Max)@Id | 1.5V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 4.2nC @ 4.5V |
| InputCapacitance(Ciss)(Max)@Vds | 441pF @ 10V |
| Power-Max | 700mW |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| Package/Case | SOT-23-6 Thin, TSOT-23-6 |
개요
Description
Key specifications often include a maximum drain-source voltage (V_DS) rating, typically around 60V, and a continuous drain current (I_D) rating that allows for robust performance in demanding conditions. The FDC6306P is packaged in a compact surface-mount format, facilitating easy integration into electronic designs.
Overall, it is favored in applications requiring reliable performance, thermal efficiency, and compact design, contributing to the advancement of modern electronic systems.
Features
1. Low On-Resistance (R_DS(on)): Provides improved efficiency and reduced power loss during operation.
2. High Speed: Capable of fast switching, making it suitable for applications such as DC-DC converters and motor drivers.
3. High Voltage Rating: Typically supports a maximum drain-source voltage (V_DS) of 30V, allowing for versatile use in various circuits.
4. Compact Package: Usually available in a compact DPAK or similar package, optimizing space on PCBs.
5. Thermal Performance: Designed for efficient thermal dissipation, enhancing reliability in demanding conditions.
6. Gate Threshold Voltage (V_GS(th)): Optimized for low-voltage drive compatibility, facilitating easy interfacing with microcontrollers.
Overall, the FDC6306P is suitable for applications in power management, consumer electronics, and automotive systems, where efficiency and reliability are critical.
Package
Pinout
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Source 1 (S1): Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1): Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Source 2 (S2): Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2): Drain terminal for the second N-channel MOSFET.
The FDC6306P is commonly used in applications like power switches, load management, and general-purpose switching. Its compact design and efficient thermal performance make it suitable for various electronic devices.
Manufacturer
Application
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