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FDC655BN
MOSFET N-CH 30V 6.3A SUPERSOT6
- 제조업체
- Mfr.부분 #FDC655BN
- 패키지 SSOT-6
- 데이터시트
- 재고 있음6461
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365 일 보장
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사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 30 V |
| Current-ContinuousDrain(Id)@25°C | 6.3A (Ta) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 25mOhm @ 6.3A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 15 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 570 pF @ 15 V |
| PowerDissipation(Max) | 1.6W (Ta) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | SuperSOT™-6 |
개요
Description
Key specifications often include a low threshold voltage, fast switching speeds, and high thermal performance, which help in reducing energy losses and improving overall system reliability. Its compact package design allows for easy integration into PCB layouts, contributing to space-saving in product designs. The FDC655BN is often utilized in applications like DC-DC converters, motor drivers, and load switching, where reliability and efficiency are paramount. Overall, the FDC655BN is a versatile component that supports modern electronic design needs.
Features
1. N-Channel Configuration: Ideal for high-side and low-side switching applications.
2. Low On-Resistance (Rds(on)): Ensures efficient operation with minimal power loss.
3. High-Voltage Rating: Capable of handling significant voltage levels, making it suitable for demanding environments.
4. Fast Switching Speed: Enables efficient operation in high-frequency applications.
5. Thermal Stability: Designed to manage heat effectively, enhancing reliability and longevity.
6. Compact Package: Available in a small footprint, facilitating space-saving designs in electronic circuits.
These characteristics make the FDC655BN suitable for a range of uses, including power supplies, motor drives, and battery management systems.
Package
Pinout
1. Gate (G) - Pin 1: Controls the switching of the MOSFET.
2. Drain (D) - Pin 2: Connected to the load; current flows out of the drain.
3. Source (S) - Pin 3: The source of current; connected to the ground or negative side of the circuit.
4-8. Other pins may include various configurations for additional functionalities or test points, but primarily the FDC655BN operates with the basic three terminals—gate, drain, and source.
This MOSFET is commonly used in power management applications due to its low on-resistance and high-speed switching capabilities. Always refer to the specific datasheet for detailed pin assignments and electrical characteristics.
Manufacturer
Application
Equivalent
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