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FDD86369
MOSFET N-CH 80V 90A DPAK
- 제조업체
- Mfr.부분 #FDD86369
- 패키지
- 데이터시트 FDD86369 DataSheet
- 재고 있음26377
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RFQ 및더 많은 할인
사양
| Supplier | onsemi |
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | Automotive, AEC-Q101, PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 80 V |
| Current-ContinuousDrain(Id)@25°C | 90A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 10V |
| RdsOn(Max)@IdVgs | 7.9mOhm @ 80A, 10V |
| Vgs(th)(Max)@Id | 4V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 54 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 2530 pF @ 40 V |
| PowerDissipation(Max) | 150W (Tj) |
| OperatingTemperature | -55°C ~ 175°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | D-PAK (TO-252) |
개요
Description
Key parameters to consider when evaluating the FDD86369 include its R_DS(on), gate threshold voltage, maximum drain-source voltage (V_DS), and total gate charge (Q_g). Understanding these specifications helps engineers select the appropriate MOSFET for their specific application needs, ensuring optimal performance and efficiency.
Features
1. Dual-Band LTE Support: Operates on both FDD and TDD bands, enhancing versatility for various network standards.
2. High Data Rates: Supports download speeds up to 150 Mbps and upload speeds up to 50 Mbps, ensuring efficient data transmission.
3. Low Power Consumption: Designed for energy efficiency, extending battery life in mobile devices.
4. Compact Form Factor: Small size facilitates integration into a wide range of devices, including smartphones and IoT applications.
5. Robust Security Features: Supports advanced encryption standards to safeguard user data and privacy.
6. Multi-Mode Capability: Compatible with multiple connectivity technologies, including 3G and 2G, for backward compatibility.
7. Ease of Integration: Simplified design allows for quicker development cycles in manufacturing.
These features make the FDD86369 suitable for a variety of applications in the mobile telecommunications sector.
Package
Pinout
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The output terminal where the load is connected.
3. Source (S) - The terminal through which current enters the MOSFET.
4. Body Diode - Provides a path for current when the MOSFET is off, allowing for reverse current flow.
The specific pin configuration may vary depending on the exact package type, so it is crucial to refer to the manufacturer's datasheet for detailed pin assignments and electrical characteristics. The FDD86369 is known for its low on-resistance and fast switching speed, making it suitable for high-efficiency applications.
Manufacturer
Application
Equivalent
배송
배송 방법We
DHL, FedEx, TNT, UPS 또는 선택한 다른 운송업체를 통해 글로벌 배송 서비스를 제공합니다.
배송 요금 참조 (DHL/FedEx):
DHL은: 배송 비용은 $25-$45 (0.5kg)에서 2-5 영업일의 추정적 배달 시간이 있습니다.
FedEx는: 배송 비용은 $25-$40 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
UPS는: 배송 비용은 $25-$45 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
TNT는: 배송 비용은 $25-$65 (0.5kg)에서 3-7 영업일의 추정적 배달 시간을 가지고 있습니다.
EMS는: 배송 비용은 $30-$50 (0.5kg)에서 7-15 영업일의 추정적 배달 시간을 제공합니다.
등록된 항공우편: 배송 비용은 $2-$4 (0.1kg), 예상 배달 시간 5-20 영업일.
지불
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