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FDD8647L
MOSFET N-CH 40V 14A/42A DPAK
- 제조업체
- Mfr.부분 #FDD8647L
- 패키지 TO-252-3
- 데이터시트
- 재고 있음7307
100% 원래 &새로운
배송 준비 24 시간
365 일 보장
RFQ 및더 많은 할인
사양
| Package | Tape & Reel (TR),Cut Tape (CT) |
| Series | PowerTrench® |
| ProductStatus | Active |
| FETType | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| DraintoSourceVoltage(Vdss) | 40 V |
| Current-ContinuousDrain(Id)@25°C | 14A (Ta), 42A (Tc) |
| DriveVoltage(MaxRdsOnMinRdsOn) | 4.5V, 10V |
| RdsOn(Max)@IdVgs | 9mOhm @ 13A, 10V |
| Vgs(th)(Max)@Id | 3V @ 250µA |
| GateCharge(Qg)(Max)@Vgs | 28 nC @ 10 V |
| Vgs(Max) | ±20V |
| InputCapacitance(Ciss)(Max)@Vds | 1640 pF @ 20 V |
| PowerDissipation(Max) | 3.1W (Ta), 43W (Tc) |
| OperatingTemperature | -55°C ~ 150°C (TJ) |
| MountingType | Surface Mount |
| SupplierDevicePackage | TO-252AA |
개요
Description
Additionally, the FDD8647L is optimized for low gate charge (Q_g), allowing for faster switching times and improved thermal performance. Its package design often includes DPAK or similar formats, facilitating efficient thermal dissipation.
Due to its robust electrical characteristics, the FDD8647L is well-suited for applications in automotive systems, industrial power supplies, and consumer electronics where reliability and efficiency are critical. The device is compatible with various circuit designs, making it a versatile choice for engineers looking to enhance power efficiency in their projects.
Features
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of power management tasks.
2. Current Rating: Offers a continuous drain current (I_D) of up to 65A, enabling it to handle significant loads.
3. On-Resistance: Has a low on-state resistance (R_DS(on)) of about 9.5 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Thermal Performance: Designed with a thermal resistance (RθJA) that enhances heat dissipation.
5. Package Type: Typically available in a TO-220 package, facilitating easy mounting and efficient heat sinking.
6. Gate Threshold Voltage: Features a gate threshold voltage (V_GS(th)) ranging from 2 to 4V, suitable for low-voltage drive circuits.
These characteristics make the FDD8647L ideal for applications in power supplies, motor drives, and DC-DC converters.
Package
Pinout
1. GDS Pins (Gate, Drain, Source): Each MOSFET has dedicated gate (G), drain (D), and source (S) pins, typically labeled as G1, D1, S1 for one MOSFET and G2, D2, S2 for the other.
2. Common Source: The source pins of both MOSFETs are often connected together to serve a common connection.
3. Power and Ground: The device is designed to handle high current and has specific pin assignments for power delivery and ground connections.
The FDD8647L is commonly used in applications such as synchronous buck converters, DC-DC converters, and power stage designs.
Manufacturer
Application
Equivalent
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