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FDD8874
MOSFET N-CH 30V 116A D-PAK
- 제조업체
- Mfr.부분 #FDD8874
- 패키지
- 데이터시트 FDD8874 DataSheet
- 재고 있음5448
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사양
| Series | PowerTrench® |
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta), 116A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 5.1mOhm @ 35A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2990 pF @ 15 V |
| Power Dissipation (Max) | 110W (Tc) |
| Operating Temperature | -55°C ~ 155°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252AA |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Base Product Number | FDD887 |
개요
Description
Key specifications often include a low R_DS(on), which minimizes power loss and enhances thermal performance. The FDD8874 may also have integrated features such as a gate drive capability, which simplifies circuit design. Its compact packaging allows for space-efficient designs in printed circuit boards (PCBs).
In summary, the FDD8874 is a versatile MOSFET offering efficiency and reliability for modern electronic applications, contributing to improved performance and energy savings. Always consult the specific datasheet for detailed electrical characteristics and application guidelines.
Features
1. Low On-Resistance: It offers a low R_DS(on), which helps in reducing conduction losses and improving efficiency.
2. High Voltage Rating: Typically rated for 30V, making it suitable for medium-voltage applications.
3. Fast Switching Speed: The device is optimized for rapid switching, making it ideal for use in high-frequency applications like DC-DC converters.
4. Thermal Performance: With a high maximum junction temperature, it can handle significant thermal loads, enhancing reliability.
5. Gate Threshold Voltage: It has a suitable gate threshold voltage that enables easy drive from standard logic levels.
6. Robust Package Options: Available in TO-220 and other packages, allowing flexibility in design and thermal management.
These features make the FDD8874 suitable for applications in power management, motor control, and other high-efficiency systems.
Package
Pinout
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first MOSFET.
3. Drain 1 (D1) - Drain terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second MOSFET.
6. Drain 2 (D2) - Drain terminal for the second MOSFET.
7. Common Source/Drain (CS) - Common connection point for the sources or drains.
8. Thermal Pad - For heat dissipation.
The device is optimized for low on-resistance and fast switching speeds, making it suitable for various power management applications.
Manufacturer
Application
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